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Title: The effects of low-energy ion bombardment on the physical vapor deposition of amorphous carbon thin films

Miscellaneous ·
OSTI ID:7303038

Amorphous carbon (a-C) films were grown in a unique deposition system. A hollow cathode was used to augment a magnetron's sputtering current at low pressures so that depositions could take place at electron cyclotron resonance (ECR) pressures. The microwave plasma ECR source provided low energy (18-30 eV) high flux (1-5 mA/cm[sup 2]) ion bombardment for the sputtered a-C films. The effect of low energy ion bombardment on a-C films was explored. The hollow cathode-magnetron-ECR system was analyzed by Langmuir probe and ion energy analyzer to determine the ion energies and fluxes of bombardment. The Ar ion energy was equal to the sheath potential with no ion kinetic energy detected. The ion energy varied inversely with pressure and no effect of microwave power was observed. The ion flux increased with increasing power and pressure. The hollow cathode increased the ion energy by the introduction of high energy (18 eV) electrons into the system. The films were deposited at the extremes of ion energy, flux and substrate temperature (293-170 K) to determine the effects on the physical vapor deposition (PVD) of a-C. The films regardless of substrate temperature and bombardment had Zone 1, columnar morphologies with resputtering of the a-C films taking place at ion energies of 30 eV. The films were characterized by Raman spectroscopy, infrared transmission and reflection spectroscopy, and four point probe to determine the films bonding, structure, optical bandgap and electrical resistivity. The Raman spectra showed the graphitic-like 1580 cm[sup [minus]1] peak and the disordered carbon 1320 cm[sup [minus]1] peak. The bandgaps were on the order of 0.25 eV while the resistivities were on the order of 0.1 ohm-cm. These properties did not vary significantly with bombardment level (energy and/or flux) or substrate temperature.

Research Organization:
Pennsylvania State Univ., University Park, PA (United States)
OSTI ID:
7303038
Resource Relation:
Other Information: Thesis (Ph.D.)
Country of Publication:
United States
Language:
English