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Title: Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates

Abstract

Solid phase heteroepitaxial crystallization of Ge{sub x}Si{sub 1-x}/(100) Si was induced by MeV ion bombardment while heating the substrate at low temperatures. Rutherford Backscatter Spectrometry (RBS), Ion Channeling, Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy (TEM) techniques were used to investigate the kinetics of the reordering process as well as characterize the strain in the resultant epitaxial layer. The epitaxial recrystallization of amorphous silicon and silicon-germanium layers on (100)silicon, deposited under medium (10{sup {minus}7} torr) vacuum conditions, was induced by 2.5 MeV Ar beam irradiation in the low temperature range of 200-400C. The regrowth follows an Arrhenius dependence with temperature and activation energies of {approximately}0.3 eV were determined for the regrowth of deposited Si and a Ge{sub 38}Si{sub 62} alloy. Ion beam induced heteroepitaxy was found to be sensitive to interfacial contaminants. In addition, the resultant crystalline quality for Ge-rich alloys was poor after irradiation. Ion beam induced heteroepitaxy of MBE-deposited Ge{sub x}Si{sub 1-x}/(100) Si, deposited under high vacuum conditions after strict interfacial preparation, resulted in layer-by-layer reordering for alloys up to 65 at. % Ge. Coherently strained epilayers were reported for ion beam annealed GeSi alloys with germanium concentration less than 15 at. %. The pseudomorphic epilayersmore » were characterized by planar and axial channeling to measure the tetragonal distortion in the strained overlayers. Strained films, produced by MeV Ar bombardment while heating the substrate at temperatures as low as 300C, were observed to relax following extended furnace anneals at temperatures of 800-900C. Such results offer the possibility of extending defect-free growth of metastable strained layers to other lattice mismatched systems.« less

Authors:
Publication Date:
Research Org.:
Cornell Univ., Ithaca, NY (United States)
OSTI Identifier:
7292799
Resource Type:
Miscellaneous
Resource Relation:
Other Information: Thesis (Ph.D.)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM ALLOYS; EPITAXY; SILICON; SILICON ALLOYS; ACTIVATION ENERGY; ANNEALING; ARGON IONS; ARRHENIUS EQUATION; ION BEAMS; ION CHANNELING; ION MICROPROBE ANALYSIS; KINETICS; MASS SPECTROSCOPY; MEV RANGE 01-10; MILLER INDICES; MOLECULAR BEAM EPITAXY; RECRYSTALLIZATION; RUTHERFORD SCATTERING; STRAINS; SUBSTRATES; TEMPERATURE EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; ALLOYS; BEAMS; CHANNELING; CHARGED PARTICLES; CHEMICAL ANALYSIS; ELASTIC SCATTERING; ELECTRON MICROSCOPY; ELEMENTS; ENERGY; ENERGY RANGE; EQUATIONS; HEAT TREATMENTS; IONS; MEV RANGE; MICROANALYSIS; MICROSCOPY; NONDESTRUCTIVE ANALYSIS; SCATTERING; SEMIMETALS; SPECTROSCOPY; 360601* - Other Materials- Preparation & Manufacture; 360602 - Other Materials- Structure & Phase Studies; 360605 - Materials- Radiation Effects

Citation Formats

Yu, A Jihhsing. Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates. United States: N. p., 1989. Web.
Yu, A Jihhsing. Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates. United States.
Yu, A Jihhsing. Sun . "Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates". United States.
@article{osti_7292799,
title = {Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates},
author = {Yu, A Jihhsing},
abstractNote = {Solid phase heteroepitaxial crystallization of Ge{sub x}Si{sub 1-x}/(100) Si was induced by MeV ion bombardment while heating the substrate at low temperatures. Rutherford Backscatter Spectrometry (RBS), Ion Channeling, Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy (TEM) techniques were used to investigate the kinetics of the reordering process as well as characterize the strain in the resultant epitaxial layer. The epitaxial recrystallization of amorphous silicon and silicon-germanium layers on (100)silicon, deposited under medium (10{sup {minus}7} torr) vacuum conditions, was induced by 2.5 MeV Ar beam irradiation in the low temperature range of 200-400C. The regrowth follows an Arrhenius dependence with temperature and activation energies of {approximately}0.3 eV were determined for the regrowth of deposited Si and a Ge{sub 38}Si{sub 62} alloy. Ion beam induced heteroepitaxy was found to be sensitive to interfacial contaminants. In addition, the resultant crystalline quality for Ge-rich alloys was poor after irradiation. Ion beam induced heteroepitaxy of MBE-deposited Ge{sub x}Si{sub 1-x}/(100) Si, deposited under high vacuum conditions after strict interfacial preparation, resulted in layer-by-layer reordering for alloys up to 65 at. % Ge. Coherently strained epilayers were reported for ion beam annealed GeSi alloys with germanium concentration less than 15 at. %. The pseudomorphic epilayers were characterized by planar and axial channeling to measure the tetragonal distortion in the strained overlayers. Strained films, produced by MeV Ar bombardment while heating the substrate at temperatures as low as 300C, were observed to relax following extended furnace anneals at temperatures of 800-900C. Such results offer the possibility of extending defect-free growth of metastable strained layers to other lattice mismatched systems.},
doi = {},
url = {https://www.osti.gov/biblio/7292799}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

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