Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates
Solid phase heteroepitaxial crystallization of Ge{sub x}Si{sub 1-x}/(100) Si was induced by MeV ion bombardment while heating the substrate at low temperatures. Rutherford Backscatter Spectrometry (RBS), Ion Channeling, Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy (TEM) techniques were used to investigate the kinetics of the reordering process as well as characterize the strain in the resultant epitaxial layer. The epitaxial recrystallization of amorphous silicon and silicon-germanium layers on (100)silicon, deposited under medium (10{sup {minus}7} torr) vacuum conditions, was induced by 2.5 MeV Ar beam irradiation in the low temperature range of 200-400C. The regrowth follows an Arrhenius dependence with temperature and activation energies of {approximately}0.3 eV were determined for the regrowth of deposited Si and a Ge{sub 38}Si{sub 62} alloy. Ion beam induced heteroepitaxy was found to be sensitive to interfacial contaminants. In addition, the resultant crystalline quality for Ge-rich alloys was poor after irradiation. Ion beam induced heteroepitaxy of MBE-deposited Ge{sub x}Si{sub 1-x}/(100) Si, deposited under high vacuum conditions after strict interfacial preparation, resulted in layer-by-layer reordering for alloys up to 65 at. % Ge. Coherently strained epilayers were reported for ion beam annealed GeSi alloys with germanium concentration less than 15 at. %. The pseudomorphic epilayers were characterized by planar and axial channeling to measure the tetragonal distortion in the strained overlayers. Strained films, produced by MeV Ar bombardment while heating the substrate at temperatures as low as 300C, were observed to relax following extended furnace anneals at temperatures of 800-900C. Such results offer the possibility of extending defect-free growth of metastable strained layers to other lattice mismatched systems.
- Research Organization:
- Cornell Univ., Ithaca, NY (United States)
- OSTI ID:
- 7292799
- Resource Relation:
- Other Information: Thesis (Ph.D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GERMANIUM ALLOYS
EPITAXY
SILICON
SILICON ALLOYS
ACTIVATION ENERGY
ANNEALING
ARGON IONS
ARRHENIUS EQUATION
ION BEAMS
ION CHANNELING
ION MICROPROBE ANALYSIS
KINETICS
MASS SPECTROSCOPY
MEV RANGE 01-10
MILLER INDICES
MOLECULAR BEAM EPITAXY
RECRYSTALLIZATION
RUTHERFORD SCATTERING
STRAINS
SUBSTRATES
TEMPERATURE EFFECTS
TRANSMISSION ELECTRON MICROSCOPY
ALLOYS
BEAMS
CHANNELING
CHARGED PARTICLES
CHEMICAL ANALYSIS
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
ENERGY RANGE
EQUATIONS
HEAT TREATMENTS
IONS
MEV RANGE
MICROANALYSIS
MICROSCOPY
NONDESTRUCTIVE ANALYSIS
SCATTERING
SEMIMETALS
SPECTROSCOPY
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
360605 - Materials- Radiation Effects