Morphological structure of silicon carbide grown by chemical vapor deposition on titanium carbide using silane and ethylene
- Oregon Graduate Inst. of Science and Technology, Portland, OR (United States). Dept. of Electrical Engineering and Applied Physics
The morphologies of polycrystalline SiC layers and [beta]-SiC epilayers deposited onto TiC[sub x] by pyrolysis of SiH[sub 4] and C[sub 2]H[sub 4] in diluted atmospheres of Ar, He, H[sub 2], Ar + He, Ar + H[sub 2], and He + H[sub 2] were studied. The fraction of the TiC[sub x] surface covered by SiC was dependent on the diluent atmosphere and the TiC[sub x] temperature (T[sub s]). The morphology and growth rate were dependent on T[sub s], at a fixed C:Si ratio. Epilayer morphologies, similar to those reported for [beta]-SiC on Si were obtained in Ar + H[sub 2], and He + H[sub 2] atmospheres, without thermal ramping, and in H[sub 2] with thermal ramping; where, the optimum C:Si ratio was a function of T[sub s]. Ratios of C:Si from 0.16 to 7.0 yielded [beta]-SiC epitaxial growth in Ar and He diluent atmospheres. The occurrence of homogeneous nucleation was strongly influence by diluted to reactant ratios and T[sub s].
- OSTI ID:
- 7289118
- Journal Information:
- Journal of the Electrochemical Society; (United States), Vol. 141:3; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON CARBIDES
CHEMICAL VAPOR DEPOSITION
MORPHOLOGY
TITANIUM CARBIDES
VAPOR DEPOSITED COATINGS
ARGON
HELIUM
HYDROGEN
MIXTURES
PARAMETRIC ANALYSIS
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
COATINGS
DEPOSITION
DISPERSIONS
ELEMENTS
FLUIDS
GASES
NONMETALS
RARE GASES
SILICON COMPOUNDS
SURFACE COATING
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies