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Title: Morphological structure of silicon carbide grown by chemical vapor deposition on titanium carbide using silane and ethylene

Abstract

The morphologies of polycrystalline SiC layers and [beta]-SiC epilayers deposited onto TiC[sub x] by pyrolysis of SiH[sub 4] and C[sub 2]H[sub 4] in diluted atmospheres of Ar, He, H[sub 2], Ar + He, Ar + H[sub 2], and He + H[sub 2] were studied. The fraction of the TiC[sub x] surface covered by SiC was dependent on the diluent atmosphere and the TiC[sub x] temperature (T[sub s]). The morphology and growth rate were dependent on T[sub s], at a fixed C:Si ratio. Epilayer morphologies, similar to those reported for [beta]-SiC on Si were obtained in Ar + H[sub 2], and He + H[sub 2] atmospheres, without thermal ramping, and in H[sub 2] with thermal ramping; where, the optimum C:Si ratio was a function of T[sub s]. Ratios of C:Si from 0.16 to 7.0 yielded [beta]-SiC epitaxial growth in Ar and He diluent atmospheres. The occurrence of homogeneous nucleation was strongly influence by diluted to reactant ratios and T[sub s].

Authors:
;  [1]
  1. (Oregon Graduate Inst. of Science and Technology, Portland, OR (United States). Dept. of Electrical Engineering and Applied Physics)
Publication Date:
OSTI Identifier:
7289118
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society; (United States)
Additional Journal Information:
Journal Volume: 141:3; Journal ID: ISSN 0013-4651
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; TITANIUM CARBIDES; VAPOR DEPOSITED COATINGS; ARGON; HELIUM; HYDROGEN; MIXTURES; PARAMETRIC ANALYSIS; CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; COATINGS; DEPOSITION; DISPERSIONS; ELEMENTS; FLUIDS; GASES; NONMETALS; RARE GASES; SILICON COMPOUNDS; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies

Citation Formats

Kruaval, G.B., and Parsons, J.D. Morphological structure of silicon carbide grown by chemical vapor deposition on titanium carbide using silane and ethylene. United States: N. p., 1994. Web. doi:10.1149/1.2054808.
Kruaval, G.B., & Parsons, J.D. Morphological structure of silicon carbide grown by chemical vapor deposition on titanium carbide using silane and ethylene. United States. doi:10.1149/1.2054808.
Kruaval, G.B., and Parsons, J.D. Tue . "Morphological structure of silicon carbide grown by chemical vapor deposition on titanium carbide using silane and ethylene". United States. doi:10.1149/1.2054808.
@article{osti_7289118,
title = {Morphological structure of silicon carbide grown by chemical vapor deposition on titanium carbide using silane and ethylene},
author = {Kruaval, G.B. and Parsons, J.D.},
abstractNote = {The morphologies of polycrystalline SiC layers and [beta]-SiC epilayers deposited onto TiC[sub x] by pyrolysis of SiH[sub 4] and C[sub 2]H[sub 4] in diluted atmospheres of Ar, He, H[sub 2], Ar + He, Ar + H[sub 2], and He + H[sub 2] were studied. The fraction of the TiC[sub x] surface covered by SiC was dependent on the diluent atmosphere and the TiC[sub x] temperature (T[sub s]). The morphology and growth rate were dependent on T[sub s], at a fixed C:Si ratio. Epilayer morphologies, similar to those reported for [beta]-SiC on Si were obtained in Ar + H[sub 2], and He + H[sub 2] atmospheres, without thermal ramping, and in H[sub 2] with thermal ramping; where, the optimum C:Si ratio was a function of T[sub s]. Ratios of C:Si from 0.16 to 7.0 yielded [beta]-SiC epitaxial growth in Ar and He diluent atmospheres. The occurrence of homogeneous nucleation was strongly influence by diluted to reactant ratios and T[sub s].},
doi = {10.1149/1.2054808},
journal = {Journal of the Electrochemical Society; (United States)},
issn = {0013-4651},
number = ,
volume = 141:3,
place = {United States},
year = {1994},
month = {3}
}