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Title: Characterization of focused ion beam induced processes (etching and metal deposition)

Abstract

Significant gains have been made in recent years in deployment of focused ion beams (FIBs) for submicron surface-topology modification. As the scope and complexity of this technology increases, a need has arisen to understand and characterize the phenomena responsible for metal deposition and etching using FIBs. To facilitate such characterization, a parametric model was developed by analyzing the relationship between the various input and output quantities. Etch rate and deposition rate are the primary output variables while the independent or adjustable variables are gas flux, scanning speed, and temperature. The process parameters, derived from the best fit between the data and the model, provide a test basis for evaluation of surface mechanisms. Additionally, the model is used to optimize the process to efficiently manipulate the desired outputs (for instance, deposition rate, etch rate, saturation factor, etc.). A key aspect of the accurate modeling procedure used here is what is called the spiked (current) delivery approach where the instantaneous value as opposed to the time-averaged value of the ion-flux impact on the target is considered.

Authors:
Publication Date:
Research Org.:
Oregon Graduate Inst. of Science and Technology, Beaverton, OR (United States)
OSTI Identifier:
7285778
Resource Type:
Miscellaneous
Resource Relation:
Other Information: Thesis (Ph.D.)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ENERGY BEAM DEPOSITION; MATHEMATICAL MODELS; ETCHING; FUNCTIONAL MODELS; ION COLLISIONS; METALS; MODIFICATIONS; PARAMETRIC ANALYSIS; SURFACES; TOPOLOGY; COLLISIONS; DEPOSITION; ELEMENTS; MATHEMATICS; SURFACE COATING; SURFACE FINISHING 665300* -- Interactions Between Beams & Condensed Matter-- (1992-); 360101 -- Metals & Alloys-- Preparation & Fabrication

Citation Formats

Gandhi, A. Characterization of focused ion beam induced processes (etching and metal deposition). United States: N. p., 1991. Web.
Gandhi, A. Characterization of focused ion beam induced processes (etching and metal deposition). United States.
Gandhi, A. 1991. "Characterization of focused ion beam induced processes (etching and metal deposition)". United States. doi:.
@article{osti_7285778,
title = {Characterization of focused ion beam induced processes (etching and metal deposition)},
author = {Gandhi, A.},
abstractNote = {Significant gains have been made in recent years in deployment of focused ion beams (FIBs) for submicron surface-topology modification. As the scope and complexity of this technology increases, a need has arisen to understand and characterize the phenomena responsible for metal deposition and etching using FIBs. To facilitate such characterization, a parametric model was developed by analyzing the relationship between the various input and output quantities. Etch rate and deposition rate are the primary output variables while the independent or adjustable variables are gas flux, scanning speed, and temperature. The process parameters, derived from the best fit between the data and the model, provide a test basis for evaluation of surface mechanisms. Additionally, the model is used to optimize the process to efficiently manipulate the desired outputs (for instance, deposition rate, etch rate, saturation factor, etc.). A key aspect of the accurate modeling procedure used here is what is called the spiked (current) delivery approach where the instantaneous value as opposed to the time-averaged value of the ion-flux impact on the target is considered.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1991,
month = 1
}

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