skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: A technique for projection x-ray lithography using computer-generated holograms

Abstract

X-ray projection lithography has recently been explored as a method for the manufacture of {lt}200 nm linewidth integrated circuits. A method is described whereby projected lithographic images can be formed with x rays by means of a transmission hologram. The form of the hologram is computed by an algorithm that eliminates the unwanted signals normally present as systematic errors in in-line holographic images. Example calculations are shown in which holograms are constructed to generate images of a given test pattern. The holographic images are shown to have excellent fidelity with respect to both resolution and contrast. Such an approach to projection x-ray lithography requires an x-ray beam with very little coherence and is thus compatible with high wafer throughput schemes; in addition, image fidelity remains high even when moderately small contaminant particles block the light from small regions of the hologram. Fabrication limits for the single optic involved are compatible with current technological limits. The approach is applicable over a large range of soft-x-ray wavelengths, indicating the feasibility of a 100 nm resolution system with 6 {mu}m depth of field using a carbon mask system operating at 5 nm, or other materials at shorter wavelengths.

Authors:
 [1];  [2]
  1. Department of Physics, State University of New York, Stony Brook, New York 11794 (United States)
  2. Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
7280260
DOE Contract Number:  
FG02-89ER60858
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics; (United States)
Additional Journal Information:
Journal Volume: 71:6; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; X RADIATION; OPTICAL EQUIPMENT; ALGORITHMS; FABRICATION; INTEGRATED CIRCUITS; LINE WIDTHS; RESOLUTION; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; EQUIPMENT; IONIZING RADIATIONS; MATHEMATICAL LOGIC; MICROELECTRONIC CIRCUITS; RADIATIONS; 440600* - Optical Instrumentation- (1990-)

Citation Formats

Jacobsen, C, and Howells, M R. A technique for projection x-ray lithography using computer-generated holograms. United States: N. p., 1992. Web. doi:10.1063/1.351003.
Jacobsen, C, & Howells, M R. A technique for projection x-ray lithography using computer-generated holograms. United States. https://doi.org/10.1063/1.351003
Jacobsen, C, and Howells, M R. 1992. "A technique for projection x-ray lithography using computer-generated holograms". United States. https://doi.org/10.1063/1.351003.
@article{osti_7280260,
title = {A technique for projection x-ray lithography using computer-generated holograms},
author = {Jacobsen, C and Howells, M R},
abstractNote = {X-ray projection lithography has recently been explored as a method for the manufacture of {lt}200 nm linewidth integrated circuits. A method is described whereby projected lithographic images can be formed with x rays by means of a transmission hologram. The form of the hologram is computed by an algorithm that eliminates the unwanted signals normally present as systematic errors in in-line holographic images. Example calculations are shown in which holograms are constructed to generate images of a given test pattern. The holographic images are shown to have excellent fidelity with respect to both resolution and contrast. Such an approach to projection x-ray lithography requires an x-ray beam with very little coherence and is thus compatible with high wafer throughput schemes; in addition, image fidelity remains high even when moderately small contaminant particles block the light from small regions of the hologram. Fabrication limits for the single optic involved are compatible with current technological limits. The approach is applicable over a large range of soft-x-ray wavelengths, indicating the feasibility of a 100 nm resolution system with 6 {mu}m depth of field using a carbon mask system operating at 5 nm, or other materials at shorter wavelengths.},
doi = {10.1063/1.351003},
url = {https://www.osti.gov/biblio/7280260}, journal = {Journal of Applied Physics; (United States)},
issn = {0021-8979},
number = ,
volume = 71:6,
place = {United States},
year = {1992},
month = {3}
}