Temperature-dependent property measurements on multi-electroded thin-layer dielectrics

doi:https://doi.org/10.1063/1.1144820

Title: Temperature-dependent property measurements on multi-electroded thin-layer dielectrics

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Abstract

A measurement system was designed and assembled for the automatic collection of electrical data for thin-layer dielectrics as a function of temperature. The dielectrics were deposited on platinized silicon by sol-gel processing, and the dielectric thickness was 0.2--0.4 [mu]m. Many ([gt]25) surface electrodes were formed by sputtering gold through a shadow mark, with a typical electrode size of 210[times]210 [mu]m[sup 2]. The measurement equipment was computer controlled, with three-axis digital stepping motors that could scan multi-electroded capacitors and collect statistically meaningful data. The temperature-dependent properties were measured between [minus]100 and 300 [degree]C as a function of frequency (100 Hz to 1 MHz) and applied field strength (0--50 MV/m). Data are reported for sol-gel-derived BaTiO[sub 3], PbZrO[sub 3], and (Pb,La)(Zr,Ti)O[sub 3] (i.e., PLZT) thin-layer capacitors. Capacitance values were typically 500--1000 pF, and the dielectric constant could be determined within a standard deviation of [plus minus]1.3%. Nanocrystalline BaTiO[sub 3] was found to have a dielectric constant of 210 at room temperature with no ferroelectric properties or dielectric anomalies between [minus]80 and 200 [degree]C. Antiferroelectric PbZrO[sub 3] had characteristic field-forced phase transformation behavior to the ferroelectric state with increasing bias. The field-induced polarization was approximately 300 mC/m[sup 2] and the coercive field wasmore »« less

Authors:

Tani, T; Xu, Z; Moses, P; Payne, D A ^[1]

Department of Materials Science and Engineering, Materials Research Laboratory, and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

Publication Date:: 1994-06-01

OSTI Identifier:: 7275216

DOE Contract Number:: FG02-91ER45439

Resource Type:: Journal Article

Journal Name:: Review of Scientific Instruments; (United States)

Additional Journal Information:: Journal Volume: 65:6; Journal ID: ISSN 0034-6748

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; BARIUM COMPOUNDS; PERMITTIVITY; LEAD COMPOUNDS; PLZT; CAPACITANCE; DATA ACQUISITION SYSTEMS; DIELECTRIC MATERIALS; ELECTRODES; FREQUENCY DEPENDENCE; HZ RANGE; KHZ RANGE; LAYERS; POLARIZATION; SOL-GEL PROCESS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TITANATES; ZIRCONATES; ALKALINE EARTH METAL COMPOUNDS; ELECTRICAL PROPERTIES; FREQUENCY RANGE; LANTHANUM COMPOUNDS; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats


                    Tani, T, Xu, Z, Moses, P, and Payne, D A. Temperature-dependent property measurements on multi-electroded thin-layer dielectrics.  United States: N. p., 1994. 
        Web.  doi:10.1063/1.1144820.

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                    Tani, T, Xu, Z, Moses, P, & Payne, D A. Temperature-dependent property measurements on multi-electroded thin-layer dielectrics.  United States.  https://doi.org/10.1063/1.1144820

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                    Tani, T, Xu, Z, Moses, P, and Payne, D A. Wed .  
        "Temperature-dependent property measurements on multi-electroded thin-layer dielectrics".  United States.  https://doi.org/10.1063/1.1144820.

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@article{osti_7275216,

  title        = {Temperature-dependent property measurements on multi-electroded thin-layer dielectrics},

  author       = {Tani, T and Xu, Z and Moses, P and Payne, D A},

  abstractNote = {A measurement system was designed and assembled for the automatic collection of electrical data for thin-layer dielectrics as a function of temperature. The dielectrics were deposited on platinized silicon by sol-gel processing, and the dielectric thickness was 0.2--0.4 [mu]m. Many ([gt]25) surface electrodes were formed by sputtering gold through a shadow mark, with a typical electrode size of 210[times]210 [mu]m[sup 2]. The measurement equipment was computer controlled, with three-axis digital stepping motors that could scan multi-electroded capacitors and collect statistically meaningful data. The temperature-dependent properties were measured between [minus]100 and 300 [degree]C as a function of frequency (100 Hz to 1 MHz) and applied field strength (0--50 MV/m). Data are reported for sol-gel-derived BaTiO[sub 3], PbZrO[sub 3], and (Pb,La)(Zr,Ti)O[sub 3] (i.e., PLZT) thin-layer capacitors. Capacitance values were typically 500--1000 pF, and the dielectric constant could be determined within a standard deviation of [plus minus]1.3%. Nanocrystalline BaTiO[sub 3] was found to have a dielectric constant of 210 at room temperature with no ferroelectric properties or dielectric anomalies between [minus]80 and 200 [degree]C. Antiferroelectric PbZrO[sub 3] had characteristic field-forced phase transformation behavior to the ferroelectric state with increasing bias. The field-induced polarization was approximately 300 mC/m[sup 2] and the coercive field was 22--28 MV/m. PLZT 8/65/35 had a dielectric constant of 556[plus minus]7 at 25 [degree]C, 100 KHz, and 50 mV.},

  doi          = {10.1063/1.1144820},

  url          = {https://www.osti.gov/biblio/7275216},
  journal      = {Review of Scientific Instruments; (United States)},

  issn         = {0034-6748},

  number       = ,

  volume       = 65:6,

  place        = {United States},

  year         = {1994},

  month        = {6}

}

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