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Title: Temperature-dependent property measurements on multi-electroded thin-layer dielectrics

Abstract

A measurement system was designed and assembled for the automatic collection of electrical data for thin-layer dielectrics as a function of temperature. The dielectrics were deposited on platinized silicon by sol-gel processing, and the dielectric thickness was 0.2--0.4 [mu]m. Many ([gt]25) surface electrodes were formed by sputtering gold through a shadow mark, with a typical electrode size of 210[times]210 [mu]m[sup 2]. The measurement equipment was computer controlled, with three-axis digital stepping motors that could scan multi-electroded capacitors and collect statistically meaningful data. The temperature-dependent properties were measured between [minus]100 and 300 [degree]C as a function of frequency (100 Hz to 1 MHz) and applied field strength (0--50 MV/m). Data are reported for sol-gel-derived BaTiO[sub 3], PbZrO[sub 3], and (Pb,La)(Zr,Ti)O[sub 3] (i.e., PLZT) thin-layer capacitors. Capacitance values were typically 500--1000 pF, and the dielectric constant could be determined within a standard deviation of [plus minus]1.3%. Nanocrystalline BaTiO[sub 3] was found to have a dielectric constant of 210 at room temperature with no ferroelectric properties or dielectric anomalies between [minus]80 and 200 [degree]C. Antiferroelectric PbZrO[sub 3] had characteristic field-forced phase transformation behavior to the ferroelectric state with increasing bias. The field-induced polarization was approximately 300 mC/m[sup 2] and the coercive field wasmore » 22--28 MV/m. PLZT 8/65/35 had a dielectric constant of 556[plus minus]7 at 25 [degree]C, 100 KHz, and 50 mV.« less

Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering, Materials Research Laboratory, and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
7275216
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments; (United States)
Additional Journal Information:
Journal Volume: 65:6; Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM COMPOUNDS; PERMITTIVITY; LEAD COMPOUNDS; PLZT; CAPACITANCE; DATA ACQUISITION SYSTEMS; DIELECTRIC MATERIALS; ELECTRODES; FREQUENCY DEPENDENCE; HZ RANGE; KHZ RANGE; LAYERS; POLARIZATION; SOL-GEL PROCESS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TITANATES; ZIRCONATES; ALKALINE EARTH METAL COMPOUNDS; ELECTRICAL PROPERTIES; FREQUENCY RANGE; LANTHANUM COMPOUNDS; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats

Tani, T, Xu, Z, Moses, P, and Payne, D A. Temperature-dependent property measurements on multi-electroded thin-layer dielectrics. United States: N. p., 1994. Web. doi:10.1063/1.1144820.
Tani, T, Xu, Z, Moses, P, & Payne, D A. Temperature-dependent property measurements on multi-electroded thin-layer dielectrics. United States. https://doi.org/10.1063/1.1144820
Tani, T, Xu, Z, Moses, P, and Payne, D A. Wed . "Temperature-dependent property measurements on multi-electroded thin-layer dielectrics". United States. https://doi.org/10.1063/1.1144820.
@article{osti_7275216,
title = {Temperature-dependent property measurements on multi-electroded thin-layer dielectrics},
author = {Tani, T and Xu, Z and Moses, P and Payne, D A},
abstractNote = {A measurement system was designed and assembled for the automatic collection of electrical data for thin-layer dielectrics as a function of temperature. The dielectrics were deposited on platinized silicon by sol-gel processing, and the dielectric thickness was 0.2--0.4 [mu]m. Many ([gt]25) surface electrodes were formed by sputtering gold through a shadow mark, with a typical electrode size of 210[times]210 [mu]m[sup 2]. The measurement equipment was computer controlled, with three-axis digital stepping motors that could scan multi-electroded capacitors and collect statistically meaningful data. The temperature-dependent properties were measured between [minus]100 and 300 [degree]C as a function of frequency (100 Hz to 1 MHz) and applied field strength (0--50 MV/m). Data are reported for sol-gel-derived BaTiO[sub 3], PbZrO[sub 3], and (Pb,La)(Zr,Ti)O[sub 3] (i.e., PLZT) thin-layer capacitors. Capacitance values were typically 500--1000 pF, and the dielectric constant could be determined within a standard deviation of [plus minus]1.3%. Nanocrystalline BaTiO[sub 3] was found to have a dielectric constant of 210 at room temperature with no ferroelectric properties or dielectric anomalies between [minus]80 and 200 [degree]C. Antiferroelectric PbZrO[sub 3] had characteristic field-forced phase transformation behavior to the ferroelectric state with increasing bias. The field-induced polarization was approximately 300 mC/m[sup 2] and the coercive field was 22--28 MV/m. PLZT 8/65/35 had a dielectric constant of 556[plus minus]7 at 25 [degree]C, 100 KHz, and 50 mV.},
doi = {10.1063/1.1144820},
url = {https://www.osti.gov/biblio/7275216}, journal = {Review of Scientific Instruments; (United States)},
issn = {0034-6748},
number = ,
volume = 65:6,
place = {United States},
year = {1994},
month = {6}
}