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Title: Process for forming one or more substantially pure layers in substrate material using ion implantation

Abstract

This patent describes a process for forming a substantially pure, monocrystalline layer of an implantable element in a monocrystalline substrate. It comprises selecting an implantable element and a monocrystalline substrate to be implanted wherein, at the temperature to be used for the implantation and annealing; the solubilities of the implantable element and the substrate material in one another are less than 10 at. %; and no intermediate phases containing both the implantable element and the substrate material exist; implanting, at a temperature ranging from about {minus}196{degrees} C to about 10{degrees} C below the melting point of the substrate, at least about 5 {times} 10{sup 16} atoms/cm{sup 2} of the implantable element in the substrate; and annealing the implanted substrate at a temperature ranging from about 20{degrees} C to about 10{degrees} C below the melting point of the substrate for a period of time of about 1 second to about 100 hours.

Inventors:
; ;
Publication Date:
OSTI Identifier:
7274023
Patent Number(s):
US 5124174; A
Application Number:
PPN: US 7-625340
Assignee:
US Dept. of Energy, Washington, DC (United States)
Resource Type:
Patent
Resource Relation:
Patent File Date: 11 Dec 1990
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MONOCRYSTALS; ION IMPLANTATION; THIN FILMS; FABRICATION; ANNEALING; CHEMICAL REACTION KINETICS; PROCESS CONTROL; SOLUBILITY; SUBSTRATES; CONTROL; CRYSTALS; FILMS; HEAT TREATMENTS; KINETICS; REACTION KINETICS; 665300* - Interactions Between Beams & Condensed Matter- (1992-)

Citation Formats

Musket, R G, Brown, D W, and Munir, Z A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States: N. p., 1992. Web.
Musket, R G, Brown, D W, & Munir, Z A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States.
Musket, R G, Brown, D W, and Munir, Z A. 1992. "Process for forming one or more substantially pure layers in substrate material using ion implantation". United States.
@article{osti_7274023,
title = {Process for forming one or more substantially pure layers in substrate material using ion implantation},
author = {Musket, R G and Brown, D W and Munir, Z A},
abstractNote = {This patent describes a process for forming a substantially pure, monocrystalline layer of an implantable element in a monocrystalline substrate. It comprises selecting an implantable element and a monocrystalline substrate to be implanted wherein, at the temperature to be used for the implantation and annealing; the solubilities of the implantable element and the substrate material in one another are less than 10 at. %; and no intermediate phases containing both the implantable element and the substrate material exist; implanting, at a temperature ranging from about {minus}196{degrees} C to about 10{degrees} C below the melting point of the substrate, at least about 5 {times} 10{sup 16} atoms/cm{sup 2} of the implantable element in the substrate; and annealing the implanted substrate at a temperature ranging from about 20{degrees} C to about 10{degrees} C below the melting point of the substrate for a period of time of about 1 second to about 100 hours.},
doi = {},
url = {https://www.osti.gov/biblio/7274023}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 23 00:00:00 EDT 1992},
month = {Tue Jun 23 00:00:00 EDT 1992}
}