Process for forming one or more substantially pure layers in substrate material using ion implantation
Abstract
This patent describes a process for forming a substantially pure, monocrystalline layer of an implantable element in a monocrystalline substrate. It comprises selecting an implantable element and a monocrystalline substrate to be implanted wherein, at the temperature to be used for the implantation and annealing; the solubilities of the implantable element and the substrate material in one another are less than 10 at. %; and no intermediate phases containing both the implantable element and the substrate material exist; implanting, at a temperature ranging from about {minus}196{degrees} C to about 10{degrees} C below the melting point of the substrate, at least about 5 {times} 10{sup 16} atoms/cm{sup 2} of the implantable element in the substrate; and annealing the implanted substrate at a temperature ranging from about 20{degrees} C to about 10{degrees} C below the melting point of the substrate for a period of time of about 1 second to about 100 hours.
- Inventors:
- Publication Date:
- OSTI Identifier:
- 7274023
- Patent Number(s):
- US 5124174; A
- Application Number:
- PPN: US 7-625340
- Assignee:
- US Dept. of Energy, Washington, DC (United States)
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11 Dec 1990
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MONOCRYSTALS; ION IMPLANTATION; THIN FILMS; FABRICATION; ANNEALING; CHEMICAL REACTION KINETICS; PROCESS CONTROL; SOLUBILITY; SUBSTRATES; CONTROL; CRYSTALS; FILMS; HEAT TREATMENTS; KINETICS; REACTION KINETICS; 665300* - Interactions Between Beams & Condensed Matter- (1992-)
Citation Formats
Musket, R G, Brown, D W, and Munir, Z A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States: N. p., 1992.
Web.
Musket, R G, Brown, D W, & Munir, Z A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States.
Musket, R G, Brown, D W, and Munir, Z A. 1992.
"Process for forming one or more substantially pure layers in substrate material using ion implantation". United States.
@article{osti_7274023,
title = {Process for forming one or more substantially pure layers in substrate material using ion implantation},
author = {Musket, R G and Brown, D W and Munir, Z A},
abstractNote = {This patent describes a process for forming a substantially pure, monocrystalline layer of an implantable element in a monocrystalline substrate. It comprises selecting an implantable element and a monocrystalline substrate to be implanted wherein, at the temperature to be used for the implantation and annealing; the solubilities of the implantable element and the substrate material in one another are less than 10 at. %; and no intermediate phases containing both the implantable element and the substrate material exist; implanting, at a temperature ranging from about {minus}196{degrees} C to about 10{degrees} C below the melting point of the substrate, at least about 5 {times} 10{sup 16} atoms/cm{sup 2} of the implantable element in the substrate; and annealing the implanted substrate at a temperature ranging from about 20{degrees} C to about 10{degrees} C below the melting point of the substrate for a period of time of about 1 second to about 100 hours.},
doi = {},
url = {https://www.osti.gov/biblio/7274023},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 23 00:00:00 EDT 1992},
month = {Tue Jun 23 00:00:00 EDT 1992}
}