Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
Patent
·
OSTI ID:7267904
A method is described for fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance. 1 figure.
- Assignee:
- Energy Conversion Devices, Inc., Troy, MI (United States)
- Patent Number(s):
- US 4891330; A
- Application Number:
- CNN: ZB-7-060003-4; PPN: US 7-174267
- OSTI ID:
- 7267904
- Resource Relation:
- Patent File Date: 28 Mar 1988
- Country of Publication:
- United States
- Language:
- English
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