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Title: Preparation and photoelectrochemical characterization of thin SnO[sub 2] nanocrystalline semiconductor films and their sensitization with Bis(2,2[prime]-bipyridine)(2,2[prime]-bipyridine-4,4[prime]-dicarboxylic acid)ruthenium(II) complex

Abstract

Thin, transparent films of SnO[sub 2] semiconductor have been prepared from 30-A-diameter colloids. Scanning electron microscopy and X-ray powder diffraction studies indicate a three-dimensional network of SnO[sub 2] nanocrystallites of particle diameter [le]50 [angstrom]. These thin nanocrystalline films exhibit reversible electrochromic effects. The electron trapping process in SnO[sub 2] particles has been investigated by both spectroelectrochemical and laser flash photolysis techniques. These electrodes are photoelectrochemically active in the UV region with incident photon-to-photocurrent conversion efficiency of 20% at 280 nm. The photocurrent increases with increasing film thickness but attains a limiting value at thickness greater than 0.75 [mu]m. The migration of charge across the grain boundaries is a limiting factor for the photocurrent generation in thicker films. These SnO[sub 2] films are highly porous and exhibit strong affinity for adsorption of sensitizer molecules such as bis(2,2[prime]-bipyridine) (2,2[prime]-bipyridine-4,4[prime]-dicarboxylic acid)ruthenium(II) perchlorate (Ru(bpy)[sub 2](dcbpy)[sup 2+]). SnO[sub 2] films modified with Ru(bpy)[sub 2](dcbpy)[sup 2+] exhibit excellent photoelectrochemical response in the visible with a power conversion efficiency of [approximately] 1% at 470 nm. 39 refs., 10 figs.

Authors:
;  [1];  [2]
  1. Univ. of Notre Dame, IN (United States) Universite du Quebec, Trois Rivieres, Quebec (Canada)
  2. Univ. of Notre Dame, IN (United States)
Publication Date:
OSTI Identifier:
7267850
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Journal Article
Journal Name:
Journal of Physical Chemistry; (United States)
Additional Journal Information:
Journal Volume: 98:15; Journal ID: ISSN 0022-3654
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; PHOTOELECTROCHEMICAL CELLS; EFFICIENCY; RUTHENIUM COMPLEXES; ADSORPTION; SEMICONDUCTOR MATERIALS; CRYSTAL STRUCTURE; PHOTOLYSIS; SYNTHESIS; SENSITIZERS; TIN OXIDES; AFFINITY; CHARGE TRANSPORT; COLLOIDS; ELECTROCHEMICAL ENERGY CONVERSION; ELECTROCHROMISM; ELECTRONS; GRAIN BOUNDARIES; LASER RADIATION; LUMINESCENCE; PHOTOCURRENTS; PHOTOVOLTAIC CONVERSION; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X-RAY DIFFRACTION; CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; COMPLEXES; CONVERSION; CURRENTS; DECOMPOSITION; DIFFRACTION; DIRECT ENERGY CONVERSION; DISPERSIONS; ELECTRIC CURRENTS; ELECTRO-OPTICAL EFFECTS; ELECTROCHEMICAL CELLS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; ENERGY CONVERSION; EQUIPMENT; FERMIONS; FILMS; LEPTONS; MATERIALS; MICROSCOPY; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHOTOCHEMICAL REACTIONS; RADIATIONS; REAGENTS; SCATTERING; SOLAR EQUIPMENT; SORPTION; TIN COMPOUNDS; TRANSITION ELEMENT COMPLEXES; 360602* - Other Materials- Structure & Phase Studies; 400102 - Chemical & Spectral Procedures; 400201 - Chemical & Physicochemical Properties; 400500 - Photochemistry

Citation Formats

Bedja, I, Hotchandani, S, and Kamat, P V. Preparation and photoelectrochemical characterization of thin SnO[sub 2] nanocrystalline semiconductor films and their sensitization with Bis(2,2[prime]-bipyridine)(2,2[prime]-bipyridine-4,4[prime]-dicarboxylic acid)ruthenium(II) complex. United States: N. p., 1994. Web. doi:10.1021/j100066a037.
Bedja, I, Hotchandani, S, & Kamat, P V. Preparation and photoelectrochemical characterization of thin SnO[sub 2] nanocrystalline semiconductor films and their sensitization with Bis(2,2[prime]-bipyridine)(2,2[prime]-bipyridine-4,4[prime]-dicarboxylic acid)ruthenium(II) complex. United States. doi:10.1021/j100066a037.
Bedja, I, Hotchandani, S, and Kamat, P V. Thu . "Preparation and photoelectrochemical characterization of thin SnO[sub 2] nanocrystalline semiconductor films and their sensitization with Bis(2,2[prime]-bipyridine)(2,2[prime]-bipyridine-4,4[prime]-dicarboxylic acid)ruthenium(II) complex". United States. doi:10.1021/j100066a037.
@article{osti_7267850,
title = {Preparation and photoelectrochemical characterization of thin SnO[sub 2] nanocrystalline semiconductor films and their sensitization with Bis(2,2[prime]-bipyridine)(2,2[prime]-bipyridine-4,4[prime]-dicarboxylic acid)ruthenium(II) complex},
author = {Bedja, I and Hotchandani, S and Kamat, P V},
abstractNote = {Thin, transparent films of SnO[sub 2] semiconductor have been prepared from 30-A-diameter colloids. Scanning electron microscopy and X-ray powder diffraction studies indicate a three-dimensional network of SnO[sub 2] nanocrystallites of particle diameter [le]50 [angstrom]. These thin nanocrystalline films exhibit reversible electrochromic effects. The electron trapping process in SnO[sub 2] particles has been investigated by both spectroelectrochemical and laser flash photolysis techniques. These electrodes are photoelectrochemically active in the UV region with incident photon-to-photocurrent conversion efficiency of 20% at 280 nm. The photocurrent increases with increasing film thickness but attains a limiting value at thickness greater than 0.75 [mu]m. The migration of charge across the grain boundaries is a limiting factor for the photocurrent generation in thicker films. These SnO[sub 2] films are highly porous and exhibit strong affinity for adsorption of sensitizer molecules such as bis(2,2[prime]-bipyridine) (2,2[prime]-bipyridine-4,4[prime]-dicarboxylic acid)ruthenium(II) perchlorate (Ru(bpy)[sub 2](dcbpy)[sup 2+]). SnO[sub 2] films modified with Ru(bpy)[sub 2](dcbpy)[sup 2+] exhibit excellent photoelectrochemical response in the visible with a power conversion efficiency of [approximately] 1% at 470 nm. 39 refs., 10 figs.},
doi = {10.1021/j100066a037},
journal = {Journal of Physical Chemistry; (United States)},
issn = {0022-3654},
number = ,
volume = 98:15,
place = {United States},
year = {1994},
month = {4}
}