skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Progress in CuInSe[sub 2] and CuIn(Se,S)[sub 2] module development

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:7261733
; ; ; ; ; ;  [1]
  1. Energy Photovoltaics, Inc., (EPV), P.O. Box 7456, Princeton, New Jersey 08543 (United States)

The formation of thin films of copper indium diselenide (CIS) on 929 cm[sup 2] (12 in[times]12 in) substrates and subsequent processing into photovoltaic devices and monolithically-interconnected modules is described. Improved temperature-time profiles in the selenization step have resulted in solar cells with a total area conversion efficiency of 12.5%. The effect of Cu/In ratio on the performance of such devices is reported. Standard characterization techniques are described, and temperature-dependent studies are shown to provide further valuable information. Device and material properties are also reported for the quaternary CuIn(Se,S)[sub 2]. Successful module development required the solution of many area and scribing related problems, including the problem of adhesion. A new interconnect and module technology has been validated by the achievement of a 9.7% active area conversion efficiency for a 20 cell module. The projected performance of manufactured modules is discussed in terms of proven module efficiencies.

OSTI ID:
7261733
Report Number(s):
CONF-9310273-; CODEN: APCPCS
Journal Information:
AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 306:1; Conference: 12. National Renewable Energy Laboratory (NREL) photovoltaic program review, Denver, CO (United States), Oct 1993; ISSN 0094-243X
Country of Publication:
United States
Language:
English