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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2]

Abstract

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Inventors:
;
Publication Date:
OSTI Identifier:
7258149
Patent Number(s):
US 4335266; A
Application Number:
PPN: US 6-221761
Assignee:
Boeing Co., Seattle, WA (United States)
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Resource Relation:
Patent File Date: 31 Dec 1980
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; FABRICATION; MATERIALS; ELECTRIC CONDUCTIVITY; LAYERS; N-TYPE CONDUCTORS; P-N JUNCTIONS; P-TYPE CONDUCTORS; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; JUNCTIONS; PHOTOELECTRIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Mickelsen, R A, and Chen, W S. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2]. United States: N. p., 1982. Web.
Mickelsen, R A, & Chen, W S. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2]. United States.
Mickelsen, R A, and Chen, W S. Tue . "Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2]". United States.
@article{osti_7258149,
title = {Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2]},
author = {Mickelsen, R A and Chen, W S},
abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {6}
}