A theoretical study of the permanent and transient effects of ionizing radiation on the electrical performance of metal oxide semiconductor on sapphire inverters. Final report

Technical Report · Sun Feb 01 00:00:00 EST 1976

OSTI ID:7251293

Phillips, D H

The results of theoretical calculations on the electrical performance of p-channel metal oxide semiconductor/silicon on sapphire and complementary metal oxide semiconductor on sapphire inverters subjected to ionizing radiation are presented. Permanent changes are related to threshold voltage and, thus, are applicable to many fabrication technologies. Transient effects have been characterized for typical MOS/SOS photocurrents. For each inverter type the influence of threshold voltage and gain effects on normal DC operation, switching speed and noise margin are determined. The transient photocurrent effects on output voltage and noise margins are also presented. Every effort has been made to make the results generally applicable. Where that is not possible, specific inverters have been used to illustrate results. A first order model based on the simplified Sah equations with fixed mobility and fixed capacitance has been used in these studies. (GRA)

• Research Organization: Air Force Weapons Lab., Kirtland AFB, N.Mex. (USA)
• OSTI ID: 7251293
• Report Number(s): AD-A-024752; AFWL-TR-74-264
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INVERTERS
PHYSICAL RADIATION EFFECTS
MOS TRANSISTORS
GAIN
NOISE
PERFORMANCE
RADIATION HARDENING
SAPPHIRE
SILICON
TRANSIENTS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CORUNDUM
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
HARDENING
MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems