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Title: Formation of silicon tips with lt 1 nm radius

Abstract

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-{mu}m-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

Authors:
; ;  [1];  [2];  [3]; ;  [4]; ;  [5]
  1. (Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (USA))
  2. (Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102 (USA))
  3. (Department of Electrical Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (USA))
  4. (Lawrence Livermore National Laboratory, P. O. Box 5504, L-156, Livermore, California 94550 (USA))
  5. (Electrical Engineering and Computer Science Department, University of California, Davis, California 95616 (USA))
Publication Date:
OSTI Identifier:
7246711
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 56:3; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; CATHODES; FABRICATION; ELECTRON TUBES; SILICON; FIELD EMISSION; OXIDATION; CHEMICAL REACTIONS; ELECTRODES; ELEMENTS; EMISSION; SEMIMETALS; 360604* - Materials- Corrosion, Erosion, & Degradation; 426000 - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Marcus, R.B., Ravi, T.S., Gmitter, T., Chin, K., Liu, D., Orvis, W.J., Ciarlo, D.R., Hunt, C.E., and Trujillo, J. Formation of silicon tips with lt 1 nm radius. United States: N. p., 1990. Web. doi:10.1063/1.102841.
Marcus, R.B., Ravi, T.S., Gmitter, T., Chin, K., Liu, D., Orvis, W.J., Ciarlo, D.R., Hunt, C.E., & Trujillo, J. Formation of silicon tips with lt 1 nm radius. United States. doi:10.1063/1.102841.
Marcus, R.B., Ravi, T.S., Gmitter, T., Chin, K., Liu, D., Orvis, W.J., Ciarlo, D.R., Hunt, C.E., and Trujillo, J. Mon . "Formation of silicon tips with lt 1 nm radius". United States. doi:10.1063/1.102841.
@article{osti_7246711,
title = {Formation of silicon tips with lt 1 nm radius},
author = {Marcus, R.B. and Ravi, T.S. and Gmitter, T. and Chin, K. and Liu, D. and Orvis, W.J. and Ciarlo, D.R. and Hunt, C.E. and Trujillo, J.},
abstractNote = {Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-{mu}m-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.},
doi = {10.1063/1.102841},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 56:3,
place = {United States},
year = {1990},
month = {1}
}