Formation of silicon tips with lt 1 nm radius
Abstract
Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-{mu}m-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.
- Authors:
-
- Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (USA)
- Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102 (USA)
- Department of Electrical Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (USA)
- Lawrence Livermore National Laboratory, P. O. Box 5504, L-156, Livermore, California 94550 (USA)
- Electrical Engineering and Computer Science Department, University of California, Davis, California 95616 (USA)
- Publication Date:
- OSTI Identifier:
- 7246711
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters; (USA)
- Additional Journal Information:
- Journal Volume: 56:3; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING; CATHODES; FABRICATION; ELECTRON TUBES; SILICON; FIELD EMISSION; OXIDATION; CHEMICAL REACTIONS; ELECTRODES; ELEMENTS; EMISSION; SEMIMETALS; 360604* - Materials- Corrosion, Erosion, & Degradation; 426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Marcus, R B, Ravi, T S, Gmitter, T, Chin, K, Liu, D, Orvis, W J, Ciarlo, D R, Hunt, C E, and Trujillo, J. Formation of silicon tips with lt 1 nm radius. United States: N. p., 1990.
Web. doi:10.1063/1.102841.
Marcus, R B, Ravi, T S, Gmitter, T, Chin, K, Liu, D, Orvis, W J, Ciarlo, D R, Hunt, C E, & Trujillo, J. Formation of silicon tips with lt 1 nm radius. United States. https://doi.org/10.1063/1.102841
Marcus, R B, Ravi, T S, Gmitter, T, Chin, K, Liu, D, Orvis, W J, Ciarlo, D R, Hunt, C E, and Trujillo, J. 1990.
"Formation of silicon tips with lt 1 nm radius". United States. https://doi.org/10.1063/1.102841.
@article{osti_7246711,
title = {Formation of silicon tips with lt 1 nm radius},
author = {Marcus, R B and Ravi, T S and Gmitter, T and Chin, K and Liu, D and Orvis, W J and Ciarlo, D R and Hunt, C E and Trujillo, J},
abstractNote = {Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-{mu}m-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.},
doi = {10.1063/1.102841},
url = {https://www.osti.gov/biblio/7246711},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 56:3,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 1990},
month = {Mon Jan 15 00:00:00 EST 1990}
}
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