Study and development of highly reliable random access semiconductor memory. Final report, Jan--Dec 1974
Design principles for highly reliable random access semiconductor memories are discussed. The memories include volatile and non-volatile data storage partitions and operate in conjunction with an established on-board-computer. The design principles allow the derivation of the optimum organization in terms of the desired memory capacity and the component reliabilities. The necessity for error detection and correction or reconfiguration can also be determined. An 8K16 memory was designed in detail to demonstrate the design principles. Suitable components, device packages, mechanical assembly, reliability, radiation resistance, error detection and correction, reconfiguration and software were considered. (GRA)
- Research Organization:
- Plessey Co. Ltd., Towcester (UK). Allen Clark Research Centre
- DOE Contract Number:
- ESTEC-2068/73-HP
- OSTI ID:
- 7245798
- Report Number(s):
- N-76-19349; ESA-CR(P)-746
- Country of Publication:
- United States
- Language:
- English
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SEMICONDUCTOR STORAGE DEVICES
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RADIATION HARDENING
COMPUTERS
CORRECTIONS
ERRORS
RELIABILITY
HARDENING
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PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
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Instruments
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