Semiconductor measurement technology: permanent damage effects of nuclear radiation on the x-band performance of silicon schottky-barrier microwave mixer diodes. Final report

Technical Report · Thu Apr 01 00:00:00 EST 1976

OSTI ID:7245797

Kenney, J M

The permanent damage induced by nuclear radiation in silicon Schottky-barrier X-band microwave mixer diodes was assessed by subjecting separate groups of diodes to /sup 60/Co gamma rays and fast neutrons (E>10 keV) of progressively higher levels, reaching a total gamma dose of 1.7 x 10 to the 8th power rads (Si) and a cumulative neutron fluence of 5.5 x 10 to the 15th power/cm. Measurements were made at a local oscillator frequency of 9375 MHz to determine changes in conversion insertion loss, local oscillator return loss and SWR, i-f output conductance, self-bias, and forward current at one dc bias voltage. (GRA)

• Research Organization: National Bureau of Standards, Washington, D.C. (USA)
• OSTI ID: 7245797
• Report Number(s): PB-252682; NBS-SPEC.PUBL.-400-7
• Resource Relation: Other Information: Sponsored in part by Defense Nuclear Agency, Washington, D.C. Prepared in cooperation with Harry Diamond Labs., Adelphi, Md. Library of Congress catalog card no. 76-5868
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SCHOTTKY BARRIER DIODES
PHYSICAL RADIATION EFFECTS
ELECTRICAL PROPERTIES
FAST NEUTRONS
GAMMA RADIATION
MIXERS
SILICON DIODES
TRANSISTOR OSCILLATORS
BARYONS
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
FERMIONS
HADRONS
IONIZING RADIATIONS
NEUTRONS
NUCLEONS
OSCILLATORS
PHYSICAL PROPERTIES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems