Native oxide films of In sub 0. 53 Ga sub 0. 47 As formed using plasma anodization

Journal Article · Mon Jun 01 00:00:00 EDT 1992 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2069490· OSTI ID:7237844

Kimpton, D G; Swanson, J G ^[1]

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1. Dept. of Electronic and Electrical Engineering, King's College London, Strand, London WC2R 2LS (GB)

This paper reports on DC plasma anodization that has been used to form insulating native oxide films on IN{sub 0.53}Ga{sub 0.47}As epitaxial layers supported on semi-insulting and conducting InP substrates. Anodizations at constant current density have been compared with those which were limited by a preset voltage. Rutherford back scattering showed that the composition was In{sub 0.46}(Ga + As){sub 1.47}O{sub 6.0} for both anodization processes. There was a loss of about 11% In in comparison with the aggregate of the Ga and As fractions. The absolute losses of In and (Ga + As) were 20 and 6%, respectively. The volume increase on oxidation was imperceptible. Auger electron spectroscopy showed that the oxide-semiconductor interface width was less than 40 {Angstrom}. When current limited growth was used, the composition within 200 {Angstrom} of the interface was particularly uniform. Measurements of electrical resistivity, breakdown field, permittivity, and etch rate are reported and point to the usefulness of the plasma native oxide as a device insulator material.

• OSTI ID: 7237844
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 139:6; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
INDIUM PHOSPHIDES
SUBSTRATES
OXIDES
INTERFACES
SEMICONDUCTOR MATERIALS
THIN FILMS
AUGER ELECTRON SPECTROSCOPY
ANODIZATION
BACKSCATTERING
CHEMICAL COMPOSITION
CURRENT DENSITY
ELECTRIC IMPEDANCE
EPITAXY
ETCHING
GALLIUM ARSENIDES
INDIUM ARSENIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
CORROSION PROTECTION
DEPOSITION
ELECTROCHEMICAL COATING
ELECTROLYSIS
ELECTRON SPECTROSCOPY
FILMS
GALLIUM COMPOUNDS
IMPEDANCE
INDIUM COMPOUNDS
LYSIS
MATERIALS
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
SPECTROSCOPY
SURFACE COATING
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
400101 - Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
665300 - Interactions Between Beams & Condensed Matter- (1992-)