Application of x-ray diffraction techniques to the structural study of silicon based heterostructures

Title: Application of x-ray diffraction techniques to the structural study of silicon based heterostructures

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Abstract

X-ray techniques have been applied to the characterization of various device type Si-Ge heterostructures. Double crystal diffractometry was used to evaluate the crystal perfection and thermal stability of buried Si{sub 1-x}Ge{sub x}/Si superlattices used in p-i-n photodetectors. The glancing incidence x-ray technique is more sensitive to the near surface region and better suited to study the in layered structures. This method was used to obtain the structural parameters of Si{sub m}Ge{sub n} short-period superlattices. Ultrathin buried Ge layers (1-12 monolayers) on (100) Si were also investigated by analyzing intensity oscillations in the reflected x rays arising from interference effects. This technique is sensitive enough to detect Ge layers one atomic layer thick. Comparison of the measured and calculated reflected intensity also provided an estimate of the morphology and interface sharpness of these heterostructures. The same technique was also applied to the study of a very thin heavily erbium-doped Si epilayer.

Authors:

Baribeau, J M; Houghton, D C ^[1]

Inst. for Microstructural Sciences, Ottawa, Ontario (Canada)

OSTI Identifier:: 7237811

Report Number(s):: CONF-901035-
Journal ID: ISSN 0734-211X; CODEN: JVTBD

Resource Type:: Conference

Journal Name:: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

Additional Journal Information:: Journal Volume: 9:4; Conference: 37. national American Vacuum Society symposium, Toronto (Canada), 8-12 Oct 1990; Journal ID: ISSN 0734-211X

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GERMANIDES; CRYSTAL STRUCTURE; X-RAY DIFFRACTION; SILICON; SILICON COMPOUNDS; INTERFACES; MORPHOLOGY; STABILITY; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; GERMANIUM COMPOUNDS; SCATTERING; SEMIMETALS; 360602* - Other Materials- Structure & Phase Studies

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                    Baribeau, J M, and Houghton, D C. Application of x-ray diffraction techniques to the structural study of silicon based heterostructures.  United States: N. p.,  
        Web.

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                    Baribeau, J M, & Houghton, D C. Application of x-ray diffraction techniques to the structural study of silicon based heterostructures.  United States.

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                    Baribeau, J M, and Houghton, D C. .  
        "Application of x-ray diffraction techniques to the structural study of silicon based heterostructures".  United States.

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@article{osti_7237811,

  title        = {Application of x-ray diffraction techniques to the structural study of silicon based heterostructures},

  author       = {Baribeau, J M and Houghton, D C},

  abstractNote = {X-ray techniques have been applied to the characterization of various device type Si-Ge heterostructures. Double crystal diffractometry was used to evaluate the crystal perfection and thermal stability of buried Si{sub 1-x}Ge{sub x}/Si superlattices used in p-i-n photodetectors. The glancing incidence x-ray technique is more sensitive to the near surface region and better suited to study the in layered structures. This method was used to obtain the structural parameters of Si{sub m}Ge{sub n} short-period superlattices. Ultrathin buried Ge layers (1-12 monolayers) on (100) Si were also investigated by analyzing intensity oscillations in the reflected x rays arising from interference effects. This technique is sensitive enough to detect Ge layers one atomic layer thick. Comparison of the measured and calculated reflected intensity also provided an estimate of the morphology and interface sharpness of these heterostructures. The same technique was also applied to the study of a very thin heavily erbium-doped Si epilayer.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/7237811},
  journal      = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},

  issn         = {0734-211X},

  number       = ,

  volume       = 9:4,

  place        = {United States},

  year         = {},

  month        = {}

}

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