Epitaxial growth and interface parameters of Si layers on GaAs(001) and AlAs(001) substrates

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7237803

Bratina, G; Sorba, L; Antonini, A; Vanzetti, L; Franciosi, A ^[1]

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1. Lab. TASC-INFM, Trieste (Italy) Univ. of Minnesota, Minneapolis (United States)

Thin Si epitaxial layers (1-14 monolayers) were fabricated by molecular beam epitaxy on GaAs(001) and AlAs(001) substrates also obtained by molecular beam epitaxy on GaAs(001) wafers. In situ studies by monochromatic x-ray photoemission show initial layer-by-layer Si growth on both substrates with only minor Si indiffusion. Reflection high energy electron diffraction analysis shows good epitaxy with some indication of three-dimensional growth at Si coverages higher than 4-8 monolayers. A comparison by the authors of their results with recent heterojunction theories suggests that the best predictions for the band offsets are obtained with the model solid approach using deformation potentials to describe the effect of strain. The Si epitaxial layers are found to remain stable upon growth of AlAs or GaAs layers on top of the Si layers.

• OSTI ID: 7237803
• Report Number(s): CONF-910115-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
SILICON
MOLECULAR BEAM EPITAXY
BOND LENGTHS
ELECTRON DIFFRACTION
INTERFACES
LATTICE PARAMETERS
MATHEMATICAL MODELS
STRAINS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
DIMENSIONS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LENGTH
PNICTIDES
SCATTERING
SEMIMETALS
360602* - Other Materials- Structure & Phase Studies