skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study

Abstract

The authors studied the Bi/InP(110) interface for 0.35- and 0.9-monolayer (ML) Bi coverages by photoemission extended x-ray absorption fine-structure (PEXAFS). P 2p PEXAFS data were acquired. The data were analyzed by Fourier filtering followed by phase analysis using a novel curve-fitting procedure in which the E{sub 0} is also floated. For 0.9-ML Bi/InP(110), the results show that Bi grows epitaxially and the P-Bi bond length is 2.42{plus minus}0.05 {angstrom}. The first P-In nearest neighbor distance is determined as 2.46{plus minus}0.05{angstrom}, which is almost equal to the P-In bond length for the clean InP(110) surface and the bond length for the clean InP(110) surface and the bond length is 3% contracted in comparison to its value for bulk InP. Note that the surface states for the clean InP(110) surface are pushed out of the band gap due to surface relaxation. Hence, the interface states due to the atomic geometries of the substrate at the interface may not influence Schottky barrier formation to cause Fermi-level pinning. The P-P and P-Bi bond lengths in the second near-neighbor distance were determined as 4.17{plus minus}0.06 and 4.26{plus minus}0.06{angstrom}, respectively.

Authors:
; ;  [1];  [2];  [3]
  1. Univ. of Notre Dame, IN (United States)
  2. Univ. of Wisconsin, Stoughton (United States)
  3. Ecole Polytechnique Federale, Lausanne (Switzerland)
OSTI Identifier:
7237794
Report Number(s):
CONF-910115-
Journal ID: ISSN 0734-211X; CODEN: JVTBD
Resource Type:
Conference
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH; CRYSTAL STRUCTURE; INDIUM PHOSPHIDES; BOND LENGTHS; ENERGY ABSORPTION; FERMI LEVEL; INTERFACES; MOLECULAR STRUCTURE; PHOTOEMISSION; SCHOTTKY EFFECT; X-RAY SPECTROSCOPY; ABSORPTION; DIMENSIONS; ELEMENTS; EMISSION; ENERGY LEVELS; INDIUM COMPOUNDS; LENGTH; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SECONDARY EMISSION; SORPTION; SPECTROSCOPY; 360602* - Other Materials- Structure & Phase Studies

Citation Formats

Choudhary, K M, Mangat, P S, Seshadri, P, Kilday, D, and Margaritondo, G. Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study. United States: N. p., Web.
Choudhary, K M, Mangat, P S, Seshadri, P, Kilday, D, & Margaritondo, G. Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study. United States.
Choudhary, K M, Mangat, P S, Seshadri, P, Kilday, D, and Margaritondo, G. . "Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study". United States.
@article{osti_7237794,
title = {Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study},
author = {Choudhary, K M and Mangat, P S and Seshadri, P and Kilday, D and Margaritondo, G},
abstractNote = {The authors studied the Bi/InP(110) interface for 0.35- and 0.9-monolayer (ML) Bi coverages by photoemission extended x-ray absorption fine-structure (PEXAFS). P 2p PEXAFS data were acquired. The data were analyzed by Fourier filtering followed by phase analysis using a novel curve-fitting procedure in which the E{sub 0} is also floated. For 0.9-ML Bi/InP(110), the results show that Bi grows epitaxially and the P-Bi bond length is 2.42{plus minus}0.05 {angstrom}. The first P-In nearest neighbor distance is determined as 2.46{plus minus}0.05{angstrom}, which is almost equal to the P-In bond length for the clean InP(110) surface and the bond length for the clean InP(110) surface and the bond length is 3% contracted in comparison to its value for bulk InP. Note that the surface states for the clean InP(110) surface are pushed out of the band gap due to surface relaxation. Hence, the interface states due to the atomic geometries of the substrate at the interface may not influence Schottky barrier formation to cause Fermi-level pinning. The P-P and P-Bi bond lengths in the second near-neighbor distance were determined as 4.17{plus minus}0.06 and 4.26{plus minus}0.06{angstrom}, respectively.},
doi = {},
url = {https://www.osti.gov/biblio/7237794}, journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 9:4,
place = {United States},
year = {},
month = {}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: