Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7237794

Choudhary, K M; Mangat, P S; Seshadri, P ^[1]; Kilday, D ^[2]; Margaritondo, G ^[3]

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1. Univ. of Notre Dame, IN (United States)
2. Univ. of Wisconsin, Stoughton (United States)
3. Ecole Polytechnique Federale, Lausanne (Switzerland)

The authors studied the Bi/InP(110) interface for 0.35- and 0.9-monolayer (ML) Bi coverages by photoemission extended x-ray absorption fine-structure (PEXAFS). P 2p PEXAFS data were acquired. The data were analyzed by Fourier filtering followed by phase analysis using a novel curve-fitting procedure in which the E{sub 0} is also floated. For 0.9-ML Bi/InP(110), the results show that Bi grows epitaxially and the P-Bi bond length is 2.42{plus minus}0.05 {angstrom}. The first P-In nearest neighbor distance is determined as 2.46{plus minus}0.05{angstrom}, which is almost equal to the P-In bond length for the clean InP(110) surface and the bond length for the clean InP(110) surface and the bond length is 3% contracted in comparison to its value for bulk InP. Note that the surface states for the clean InP(110) surface are pushed out of the band gap due to surface relaxation. Hence, the interface states due to the atomic geometries of the substrate at the interface may not influence Schottky barrier formation to cause Fermi-level pinning. The P-P and P-Bi bond lengths in the second near-neighbor distance were determined as 4.17{plus minus}0.06 and 4.26{plus minus}0.06{angstrom}, respectively.

• OSTI ID: 7237794
• Report Number(s): CONF-910115-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH
CRYSTAL STRUCTURE
INDIUM PHOSPHIDES
BOND LENGTHS
ENERGY ABSORPTION
FERMI LEVEL
INTERFACES
MOLECULAR STRUCTURE
PHOTOEMISSION
SCHOTTKY EFFECT
X-RAY SPECTROSCOPY
ABSORPTION
DIMENSIONS
ELEMENTS
EMISSION
ENERGY LEVELS
INDIUM COMPOUNDS
LENGTH
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SECONDARY EMISSION
SORPTION
SPECTROSCOPY
360602* - Other Materials- Structure & Phase Studies