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Title: Atomic force microscope and scanning tunneling microscope studies of superlattices and density waves in Fe doped NbSe[sub 2], TaSe[sub 2], TaS[sub 2] and in NbSe[sub 3] doped with Fe, Co, Cr, and V

Abstract

Results of atomic force microscope (AFM) and scanning tunneling microscope (STM) studies of superlattices and long-range modulations induced by impurities in transition metal chalcogenides are presented. Superlattices formed by Fe intercalation into the van der Waals gaps of 2H--NbSe[sub 2], 2H--TaSe[sub 2] and 2H--TaS[sub 2] show ordered occupation of the octahedral holes and STM spectroscopy shows density-wave energy gaps existing in the antiferromagnetic phases. In NbSe[sub 3], interstitial impurities such as Fe, Co, Cr, and V induce long-range modulated structures that can be detected at room temperature with AFM scans. These modulations modify the charge-density wave structure forming at low temperature and STM spectroscopy has been used to measure these changes.

Authors:
; ; ; ;  [1]
  1. Department of Physics, University of Virginia, Charlottesville, Virginia 22901 (United States)
Publication Date:
OSTI Identifier:
7236319
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 12:3; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; NIOBIUM SELENIDES; SUPERLATTICES; TANTALUM SELENIDES; TANTALUM SULFIDES; AMBIENT TEMPERATURE; CHROMIUM ADDITIONS; COBALT ADDITIONS; ENERGY GAP; IRON ADDITIONS; TEMPERATURE RANGE 0000-0013 K; VANADIUM ADDITIONS; ALLOYS; CHALCOGENIDES; CHROMIUM ALLOYS; COBALT ALLOYS; IRON ALLOYS; NIOBIUM COMPOUNDS; REFRACTORY METAL COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TANTALUM COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; VANADIUM ALLOYS; 360602* - Other Materials- Structure & Phase Studies

Citation Formats

Coleman, R V, Dai, Z, Gong, Y, Slough, C G, and Xue, Q. Atomic force microscope and scanning tunneling microscope studies of superlattices and density waves in Fe doped NbSe[sub 2], TaSe[sub 2], TaS[sub 2] and in NbSe[sub 3] doped with Fe, Co, Cr, and V. United States: N. p., 1994. Web. doi:10.1116/1.587603.
Coleman, R V, Dai, Z, Gong, Y, Slough, C G, & Xue, Q. Atomic force microscope and scanning tunneling microscope studies of superlattices and density waves in Fe doped NbSe[sub 2], TaSe[sub 2], TaS[sub 2] and in NbSe[sub 3] doped with Fe, Co, Cr, and V. United States. https://doi.org/10.1116/1.587603
Coleman, R V, Dai, Z, Gong, Y, Slough, C G, and Xue, Q. 1994. "Atomic force microscope and scanning tunneling microscope studies of superlattices and density waves in Fe doped NbSe[sub 2], TaSe[sub 2], TaS[sub 2] and in NbSe[sub 3] doped with Fe, Co, Cr, and V". United States. https://doi.org/10.1116/1.587603.
@article{osti_7236319,
title = {Atomic force microscope and scanning tunneling microscope studies of superlattices and density waves in Fe doped NbSe[sub 2], TaSe[sub 2], TaS[sub 2] and in NbSe[sub 3] doped with Fe, Co, Cr, and V},
author = {Coleman, R V and Dai, Z and Gong, Y and Slough, C G and Xue, Q},
abstractNote = {Results of atomic force microscope (AFM) and scanning tunneling microscope (STM) studies of superlattices and long-range modulations induced by impurities in transition metal chalcogenides are presented. Superlattices formed by Fe intercalation into the van der Waals gaps of 2H--NbSe[sub 2], 2H--TaSe[sub 2] and 2H--TaS[sub 2] show ordered occupation of the octahedral holes and STM spectroscopy shows density-wave energy gaps existing in the antiferromagnetic phases. In NbSe[sub 3], interstitial impurities such as Fe, Co, Cr, and V induce long-range modulated structures that can be detected at room temperature with AFM scans. These modulations modify the charge-density wave structure forming at low temperature and STM spectroscopy has been used to measure these changes.},
doi = {10.1116/1.587603},
url = {https://www.osti.gov/biblio/7236319}, journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 12:3,
place = {United States},
year = {Sun May 01 00:00:00 EDT 1994},
month = {Sun May 01 00:00:00 EDT 1994}
}