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Title: Diffusional crack growth and creep rupture of silicon carbide doped with alumina

Abstract

This study with tensile creep and crack growth behavior of silicon carbide doped with alumina at 1,400 C. Excellent creep resistance was observed for stresses from 150 MPa to 200 MPa. From the creep exponent of 1.4 and the activation energy of 320 kJ/mol, the principal creep mechanism was Coble creep. The creep failure was caused by slow crack growth from a preexisting flaw. The crack was found to grow subcritically along grain boundaries almost in isolation. The relation between the time-to-failure and the applied stress was well treated by a diffusive crack growth model, and the threshold stress of this material at 1,400 C was estimated at 165 MPa.

Authors:
;  [1]
  1. (National Industrial Research Inst., Nagoya (Japan))
Publication Date:
OSTI Identifier:
7233558
Resource Type:
Journal Article
Journal Name:
Journal of the American Ceramic Society; (United States)
Additional Journal Information:
Journal Volume: 77:3; Journal ID: ISSN 0002-7820
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRACK PROPAGATION; CREEP; SILICON CARBIDES; TENSILE PROPERTIES; ALUMINIUM COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; MECHANICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; 360203* - Ceramics, Cermets, & Refractories- Mechanical Properties

Citation Formats

Ohji, Tatsuki, and Yamauchi, Yukihiko. Diffusional crack growth and creep rupture of silicon carbide doped with alumina. United States: N. p., 1994. Web. doi:10.1111/j.1151-2916.1994.tb05348.x.
Ohji, Tatsuki, & Yamauchi, Yukihiko. Diffusional crack growth and creep rupture of silicon carbide doped with alumina. United States. doi:10.1111/j.1151-2916.1994.tb05348.x.
Ohji, Tatsuki, and Yamauchi, Yukihiko. Tue . "Diffusional crack growth and creep rupture of silicon carbide doped with alumina". United States. doi:10.1111/j.1151-2916.1994.tb05348.x.
@article{osti_7233558,
title = {Diffusional crack growth and creep rupture of silicon carbide doped with alumina},
author = {Ohji, Tatsuki and Yamauchi, Yukihiko},
abstractNote = {This study with tensile creep and crack growth behavior of silicon carbide doped with alumina at 1,400 C. Excellent creep resistance was observed for stresses from 150 MPa to 200 MPa. From the creep exponent of 1.4 and the activation energy of 320 kJ/mol, the principal creep mechanism was Coble creep. The creep failure was caused by slow crack growth from a preexisting flaw. The crack was found to grow subcritically along grain boundaries almost in isolation. The relation between the time-to-failure and the applied stress was well treated by a diffusive crack growth model, and the threshold stress of this material at 1,400 C was estimated at 165 MPa.},
doi = {10.1111/j.1151-2916.1994.tb05348.x},
journal = {Journal of the American Ceramic Society; (United States)},
issn = {0002-7820},
number = ,
volume = 77:3,
place = {United States},
year = {1994},
month = {3}
}