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Title: Kinetics of formation and properties of silicon and silicon-germanium-alloy-based insulators grown using low-energy ion beam nitridation

Abstract

Growth of thin films of nitrides of silicon, germanium and silicon-germanium alloys using low energy ion beam nitridation is reported. This work includes the growth of thin nitride films, materials characterization, modeling of the mechanisms of the thin film growth and the relation of materials properties to processing parameters controlled during the thin-film growth. The key advantage of low energy ion beam processing is the ability to synthesize films at low temperatures, thereby reducing the thermal budget for processing metastable materials structures. This makes low energy ion beam processing compatible with metastable or unstable materials, which would be degraded by a higher temperature process. Three processing parameters relevant to Ion Beam Nitridation (IBN), ion energy, ion dose, and substrate temperature, are studied for their effect on the growth of these films and their resulting properties. The thickness, stress, stoichiometry and structure of IBN-fabricated thin films are examined as a function of these three parameters.

Authors:
Publication Date:
Research Org.:
Massachusetts Inst. of Tech., Cambridge, MA (United States)
OSTI Identifier:
7229104
Resource Type:
Miscellaneous
Resource Relation:
Other Information: Thesis (Ph.D.)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM; NITRIDATION; GERMANIUM ALLOYS; SILICON; SILICON ALLOYS; ION BEAMS; IRRADIATION PROCEDURES; NITROGEN IONS; ALLOYS; BEAMS; CHARGED PARTICLES; CHEMICAL REACTIONS; ELEMENTS; IONS; METALS; SEMIMETALS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360206 - Ceramics, Cermets, & Refractories- Radiation Effects

Citation Formats

Hellman, O C. Kinetics of formation and properties of silicon and silicon-germanium-alloy-based insulators grown using low-energy ion beam nitridation. United States: N. p., 1991. Web.
Hellman, O C. Kinetics of formation and properties of silicon and silicon-germanium-alloy-based insulators grown using low-energy ion beam nitridation. United States.
Hellman, O C. Tue . "Kinetics of formation and properties of silicon and silicon-germanium-alloy-based insulators grown using low-energy ion beam nitridation". United States.
@article{osti_7229104,
title = {Kinetics of formation and properties of silicon and silicon-germanium-alloy-based insulators grown using low-energy ion beam nitridation},
author = {Hellman, O C},
abstractNote = {Growth of thin films of nitrides of silicon, germanium and silicon-germanium alloys using low energy ion beam nitridation is reported. This work includes the growth of thin nitride films, materials characterization, modeling of the mechanisms of the thin film growth and the relation of materials properties to processing parameters controlled during the thin-film growth. The key advantage of low energy ion beam processing is the ability to synthesize films at low temperatures, thereby reducing the thermal budget for processing metastable materials structures. This makes low energy ion beam processing compatible with metastable or unstable materials, which would be degraded by a higher temperature process. Three processing parameters relevant to Ion Beam Nitridation (IBN), ion energy, ion dose, and substrate temperature, are studied for their effect on the growth of these films and their resulting properties. The thickness, stress, stoichiometry and structure of IBN-fabricated thin films are examined as a function of these three parameters.},
doi = {},
url = {https://www.osti.gov/biblio/7229104}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

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