Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes

Journal Article · Tue Mar 01 00:00:00 EST 1994 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.275475· OSTI ID:7227474

Schneider, Jr, R P; Choquette, K D; Lear, K L; Figiel, J J ^[1]; Lott, J A ^[2]; Malloy, K J ^[3]

---

1. Sandia National Labs., Albuquerque, NM (United States)
2. Sandia National Labs., Albuquerque, NM (United States) Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
3. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials

Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 [mu]m-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45 C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7227474
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 6:3; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
PERFORMANCE
ALUMINIUM ARSENIDES
FABRICATION
GALLIUM ARSENIDES
HEAT SINKS
INDIUM PHOSPHIDES
OPERATION
VISIBLE RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SINKS
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)