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Title: Physics of the ferroelectric nonvolatile memory field effect transistor

Abstract

The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time. The ferroelectric transistor device properties are derived by combining the silicon charge-sheet model of metal-oxide-semiconductor field-effect transistor device operation with Maxwell's first equation which describes the properties of the ferroelectric film. The model we present describes ferroelectric transistor {ital I}-{ital V} and {ital C}-{ital V} behavior when time-dependent voltages are applied which result in hysteresis due to ferroelectric switching. The theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor. These parameters include the ferroelectric spontaneous and remanent polarization, the coercive field, and dielectric layer thicknesses. We have found that the conventional concept of threshold voltage is no longer useful, and that increasing the spontaneous polarization has only a minor impact on memory operation due to reverse dipole switching of the ferroelectric layer. The application of the model to optimize design and fabrication parameters is illustrated with a virtual prototyping example. The model is also used to develop a practical testing methodology for this unique device.

Authors:
;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
7226379
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics; (United States)
Additional Journal Information:
Journal Volume: 72:12; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; FERROELECTRIC MATERIALS; USES; FIELD EFFECT TRANSISTORS; MEMORY DEVICES; COERCIVE FORCE; MAXWELL EQUATIONS; OPTIMIZATION; POLARIZATION; THICKNESS; DIFFERENTIAL EQUATIONS; DIMENSIONS; EQUATIONS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Miller, S L, and McWhorter, P J. Physics of the ferroelectric nonvolatile memory field effect transistor. United States: N. p., 1992. Web. doi:10.1063/1.351910.
Miller, S L, & McWhorter, P J. Physics of the ferroelectric nonvolatile memory field effect transistor. United States. doi:10.1063/1.351910.
Miller, S L, and McWhorter, P J. Tue . "Physics of the ferroelectric nonvolatile memory field effect transistor". United States. doi:10.1063/1.351910.
@article{osti_7226379,
title = {Physics of the ferroelectric nonvolatile memory field effect transistor},
author = {Miller, S L and McWhorter, P J},
abstractNote = {The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time. The ferroelectric transistor device properties are derived by combining the silicon charge-sheet model of metal-oxide-semiconductor field-effect transistor device operation with Maxwell's first equation which describes the properties of the ferroelectric film. The model we present describes ferroelectric transistor {ital I}-{ital V} and {ital C}-{ital V} behavior when time-dependent voltages are applied which result in hysteresis due to ferroelectric switching. The theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor. These parameters include the ferroelectric spontaneous and remanent polarization, the coercive field, and dielectric layer thicknesses. We have found that the conventional concept of threshold voltage is no longer useful, and that increasing the spontaneous polarization has only a minor impact on memory operation due to reverse dipole switching of the ferroelectric layer. The application of the model to optimize design and fabrication parameters is illustrated with a virtual prototyping example. The model is also used to develop a practical testing methodology for this unique device.},
doi = {10.1063/1.351910},
journal = {Journal of Applied Physics; (United States)},
issn = {0021-8979},
number = ,
volume = 72:12,
place = {United States},
year = {1992},
month = {12}
}