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Title: Silicon solar energy cell having improved back contact and method forming same

Abstract

A silicon solar energy cell having a diffusant junction extending inwardly from one surface, an aluminum--silicon junction of the opposite polarity extending inwardly from the other surface, and a film of aluminum--oxygen--diffusant formed over the aluminum--silicon junction is described. The structure is formed by diffusing an unprotected wafer, coating the diffusant glass so formed on one side of the wafer with aluminum, and heating the wafer.

Inventors:
Publication Date:
OSTI Identifier:
7225374
Patent Number(s):
US 3990097
Assignee:
Solarex Corp.
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 18 Sep 1975
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; ALUMINIUM; COATINGS; DESIGN; DIFFUSION; ELECTRIC CONTACTS; SEMICONDUCTOR JUNCTIONS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; JUNCTIONS; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Lindmayer, J. Silicon solar energy cell having improved back contact and method forming same. United States: N. p., 1976. Web.
Lindmayer, J. Silicon solar energy cell having improved back contact and method forming same. United States.
Lindmayer, J. 1976. "Silicon solar energy cell having improved back contact and method forming same". United States.
@article{osti_7225374,
title = {Silicon solar energy cell having improved back contact and method forming same},
author = {Lindmayer, J},
abstractNote = {A silicon solar energy cell having a diffusant junction extending inwardly from one surface, an aluminum--silicon junction of the opposite polarity extending inwardly from the other surface, and a film of aluminum--oxygen--diffusant formed over the aluminum--silicon junction is described. The structure is formed by diffusing an unprotected wafer, coating the diffusant glass so formed on one side of the wafer with aluminum, and heating the wafer.},
doi = {},
url = {https://www.osti.gov/biblio/7225374}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 02 00:00:00 EST 1976},
month = {Tue Nov 02 00:00:00 EST 1976}
}