Development of efficient, radiation-insensitive GaAs:Zn LEDs
Although amphoterically Si doped GaAs LEDs are commercially popular because of their high light output, they are extremely sensitive to irradiation. Therefore, it would be desirable to have a viable alternative available for radiation environment applications. In this work it is shown that by increasing the hole concentration in the active region of nonamphoterically doped GaAs LEDs, one can simultaneously achieve high light output and low radiation sensitivity. Experimental results indicate that the minority carrier lifetime is smaller in more heavily doped devices so that the lifetime-damage constant, tau/sub o/K, is also smaller. Hence, the heavily doped devices should have greater radiation hardness. Neutron-induced light output degradation data as a function of hole concentration confirm this conclusion. The results also show that the pre-irradiation light output is greatest in the heavily doped LEDs. The accompanying decrease of tau/sub o/ in the heavily doped devices indicates that the total minority carrier lifetime is at least partially controlled by the radiative lifetime; a requirement for simultaneously achieving radiation hardness and high initial light output. Finally, an experimental comparison with amphoterically Si doped LEDs shows that the heavily doped devices are superior for neutron fluences greater than 2 x 10/sup 12/ n/cm/sup 2/.
- Research Organization:
- Sandia Labs., Albuquerque, N.Mex. (USA)
- DOE Contract Number:
- EY-76-C-04-0789
- OSTI ID:
- 7210264
- Report Number(s):
- SAND-76-5554C; CONF-770714-6; TRN: 78-000371
- Resource Relation:
- Conference: IEEE conference on nuclear and space radiation effects, Williamsburg, Virginia, USA, 12 Jul 1977
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
LIGHT EMITTING DIODES
RADIATION HARDENING
CARRIER LIFETIME
DESIGN
FABRICATION
GALLIUM ARSENIDES
HOLES
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RECOMBINATION
ZINC ADDITIONS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
HARDENING
LIFETIME
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING
ZINC ALLOYS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems