Thermal expansion contributions to band-gap and band offset temperature dependencies

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7201401

Malloy, K.J. mitev. ^[1]; Vechten, J.A. van ^[2]

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1. Univ. of New Mexico, Albuquerque (United States)
2. Oregon State Univ., Corvallis (United States)

Using a thermodynamic approach, the authors examine the role thermal expansion plays in determining the temperature dependence of band gaps and band offsets. Because of the large variation in the standard volume of electrons (or, equivalently, variation in conduction-band deformation potential) with symmetry of the conduction band, most of the band-gap temperature variation can be ascribed to the valence band for the X gap, while the variation is more equitably divided between the conduction and valence band for the {Gamma} band gap. The particulars of the AlAs/GaAs system are examined in detail, where they find evidence that X electrons have a larger electron-phonon entropy than {Gamma} electrons, and that the lowest conduction-band offset exhibits considerable temperature variation.

• OSTI ID: 7201401
• Report Number(s): CONF-910115-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
GRADED BAND GAPS
THERMAL EXPANSION
GALLIUM ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
ENERGY LEVELS
TEMPERATURE DEPENDENCE
VALENCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
EXPANSION
GALLIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
360606* - Other Materials- Physical Properties- (1992-)