Dose dependence of interface traps in gate oxides at high levels of total dose
Abstract
Interface traps in gate oxides were found to saturate at high total dose levels. An empirical model was developed to describe the nonlinear dependence and saturation characteristics. Three different processes were studied including CMOS/SOS, hardened bulk CMOS and unhardened bulk CMOS using several combinations of dose rate and bias. An evaluation was made of the model's accuracy in extrapolating the effect of interface traps to very high doses. A possible application of the model in characterizing devices for space environments is discussed along with implications for a physical model of radiation induced interface trap buildup.
- Authors:
-
- High Technology Center, Boeing Aerospace and Electronics, Seattle, WA (US)
- Publication Date:
- OSTI Identifier:
- 7198761
- Report Number(s):
- CONF-890723-
Journal ID: ISSN 0018-9499; CODEN: IETNA; TRN: 90-014151
- Resource Type:
- Conference
- Journal Name:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
- Additional Journal Information:
- Journal Volume: 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; Journal ID: ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; 36 MATERIALS SCIENCE; MOS TRANSISTORS; RADIATION HARDENING; ENVIRONMENTAL IMPACTS; EXTRAPOLATION; HOLE MOBILITY; INTERFACES; IRRADIATION; NONLINEAR PROBLEMS; SPACE VEHICLE COMPONENTS; TRAPPING; HARDENING; MOBILITY; NUMERICAL SOLUTION; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 990200 - Mathematics & Computers; 360605 - Materials- Radiation Effects
Citation Formats
Baze, M P, Plaag, R E, and Johnston, A H. Dose dependence of interface traps in gate oxides at high levels of total dose. United States: N. p., 1989.
Web.
Baze, M P, Plaag, R E, & Johnston, A H. Dose dependence of interface traps in gate oxides at high levels of total dose. United States.
Baze, M P, Plaag, R E, and Johnston, A H. 1989.
"Dose dependence of interface traps in gate oxides at high levels of total dose". United States.
@article{osti_7198761,
title = {Dose dependence of interface traps in gate oxides at high levels of total dose},
author = {Baze, M P and Plaag, R E and Johnston, A H},
abstractNote = {Interface traps in gate oxides were found to saturate at high total dose levels. An empirical model was developed to describe the nonlinear dependence and saturation characteristics. Three different processes were studied including CMOS/SOS, hardened bulk CMOS and unhardened bulk CMOS using several combinations of dose rate and bias. An evaluation was made of the model's accuracy in extrapolating the effect of interface traps to very high doses. A possible application of the model in characterizing devices for space environments is discussed along with implications for a physical model of radiation induced interface trap buildup.},
doi = {},
url = {https://www.osti.gov/biblio/7198761},
journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)},
issn = {0018-9499},
number = ,
volume = 36:6,
place = {United States},
year = {Fri Dec 01 00:00:00 EST 1989},
month = {Fri Dec 01 00:00:00 EST 1989}
}
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