Epitaxial growth of Fe-doped sapphire thin films from amorphous Al oxide layers deposited on sapphire substrates

Journal Article · Mon Jul 11 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112665· OSTI ID:7198502

Yu, N; Nastasi, M ^[1]

---

1. Materials Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Thin films of amorphous Al[sub 2]O[sub 3], about 280 nm thick, with Fe-cation concentrations of 0--4 at. % were deposited onto alpha-alumina [0001] substrates. Epitaxial regrowth of the thin films was found to occur during a postannealing process at temperatures of 950 and 1400 [degree]C. The regrowth quality was determined by Rutherford backscattering spectrometry and ion channeling measurements. Perfect regrowth was found in the undoped samples after annealing at 1400 [degree]C with a minimum backscattering yield of 2% in the Al sublattice. Furthermore, ion channeling angular scans revealed that Fe dopants occupied the substitutional sites of Al sublattice upon thermal anneal. This simple method of incorporating dopants into single-crystal alumina has potential in the fabrications of thin-film planar optical waveguides.

• OSTI ID: 7198502
• Journal Information: Applied Physics Letters; (United States), Vol. 65:2; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
EPITAXY
ANNEALING
ION CHANNELING
IRON ADDITIONS
SAPPHIRE
THIN FILMS
ALLOYS
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHANNELING
CORUNDUM
FILMS
HEAT TREATMENTS
IRON ALLOYS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication