Molecular beam studies of a gas-surface reaction: Dynamics of laser-induced chemical etching of Si(111) by chlorine
Abstract
Laser-induced chemical etching of Si(111) surface with molecular chlorine is investigated by use of a CW supersonic molecular beam under 355- and 560-nm pulsed laser irradiation. Two major desorbed reaction products, SiCl and SiCl{sub 2}, are observed by time-resolved mass spectrometry. The time-of-flight (TOF) spectra of the desorbed species are measured as a function of laser fluence and the translational energy of the incident chlorine molecules. The measured TOF spectra can be fitted to a Maxwell-Boltzmann distribution at laser fluences lower than 120 mJ/cm{sup 2}. The enhancement of the laser-induced gas-surface reaction on raising the normal component of the translational energy of the chlorine molecules is obvious for both laser wavelength cases. A reaction mechanism that mainly involves the dissociative chemisorption of Cl{sub 2}, the reaction of the adsorbed species, and the laser-induced desorption on the surface is proposed.
- Authors:
-
- Fudan Univ., Shanghai (China)
- Publication Date:
- OSTI Identifier:
- 7197565
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Physical Chemistry; (USA)
- Additional Journal Information:
- Journal Volume: 93:14; Journal ID: ISSN 0022-3654
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; SILICON; ETCHING; CHLORINE; DATA ANALYSIS; EXPERIMENTAL DATA; LASERS; MEASURING INSTRUMENTS; MEASURING METHODS; MOLECULAR BEAMS; SEMICONDUCTOR MATERIALS; BEAMS; DATA; ELEMENTS; HALOGENS; INFORMATION; MATERIALS; NONMETALS; NUMERICAL DATA; SEMIMETALS; SURFACE FINISHING; 360603* - Materials- Properties; 400400 - Electrochemistry; 400201 - Chemical & Physicochemical Properties
Citation Formats
Li, Yu-lin, Zheng, Qi-ke, Jin, Zhong-kao, Yu, Min, Wu, Zheng-kai, and Qin, Qi-zong. Molecular beam studies of a gas-surface reaction: Dynamics of laser-induced chemical etching of Si(111) by chlorine. United States: N. p., 1989.
Web.
Li, Yu-lin, Zheng, Qi-ke, Jin, Zhong-kao, Yu, Min, Wu, Zheng-kai, & Qin, Qi-zong. Molecular beam studies of a gas-surface reaction: Dynamics of laser-induced chemical etching of Si(111) by chlorine. United States.
Li, Yu-lin, Zheng, Qi-ke, Jin, Zhong-kao, Yu, Min, Wu, Zheng-kai, and Qin, Qi-zong. 1989.
"Molecular beam studies of a gas-surface reaction: Dynamics of laser-induced chemical etching of Si(111) by chlorine". United States.
@article{osti_7197565,
title = {Molecular beam studies of a gas-surface reaction: Dynamics of laser-induced chemical etching of Si(111) by chlorine},
author = {Li, Yu-lin and Zheng, Qi-ke and Jin, Zhong-kao and Yu, Min and Wu, Zheng-kai and Qin, Qi-zong},
abstractNote = {Laser-induced chemical etching of Si(111) surface with molecular chlorine is investigated by use of a CW supersonic molecular beam under 355- and 560-nm pulsed laser irradiation. Two major desorbed reaction products, SiCl and SiCl{sub 2}, are observed by time-resolved mass spectrometry. The time-of-flight (TOF) spectra of the desorbed species are measured as a function of laser fluence and the translational energy of the incident chlorine molecules. The measured TOF spectra can be fitted to a Maxwell-Boltzmann distribution at laser fluences lower than 120 mJ/cm{sup 2}. The enhancement of the laser-induced gas-surface reaction on raising the normal component of the translational energy of the chlorine molecules is obvious for both laser wavelength cases. A reaction mechanism that mainly involves the dissociative chemisorption of Cl{sub 2}, the reaction of the adsorbed species, and the laser-induced desorption on the surface is proposed.},
doi = {},
url = {https://www.osti.gov/biblio/7197565},
journal = {Journal of Physical Chemistry; (USA)},
issn = {0022-3654},
number = ,
volume = 93:14,
place = {United States},
year = {Thu Jul 13 00:00:00 EDT 1989},
month = {Thu Jul 13 00:00:00 EDT 1989}
}