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Title: Dry texturing of solar cells

Patent ·
OSTI ID:7193238

A textured backside of a semiconductor device for increasing light scattering and absorption in a semiconductor substrate is accomplished by applying infrared radiation to the front side of a semiconductor substrate that has a metal layer deposited on its backside in a time-energy profile that first produces pits in the backside surface and then produces a thin, highly reflective, low resistivity, epitaxial alloy layer over the entire area of the interface between the semiconductor substrate and a metal contact layer. The time-energy profile includes ramping up to a first energy level and holding for a period of time to create the desired pit size and density and then rapidly increasing the energy to a second level in which the entire interface area is melted and alloyed quickly. After holding the second energy level for a sufficient time to develop the thin alloy layer over the entire interface area, the energy is ramped down to allow epitaxial crystal growth in the alloy layer. The result is a textured backside on an optically reflective, low resistivity alloy interface between the semiconductor substrate and the metal electrical contact layer. 9 figs.

DOE Contract Number:
AC02-83CH10093
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
Patent Number(s):
US 5358574; A
Application Number:
PPN: US 8-155385
OSTI ID:
7193238
Resource Relation:
Patent File Date: 22 Nov 1993
Country of Publication:
United States
Language:
English