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Title: Method of etching zirconium diboride

Abstract

The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.

Inventors:
;
Publication Date:
Research Org.:
Department of the Army, Washington, DC (USA)
OSTI Identifier:
7192671
Assignee:
Department of the Army, Washington, DC GRA; GRA-88-50689; EDB-88-162124
Resource Type:
Patent
Resource Relation:
Other Information: This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of application available NTIS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; DIFFUSION COATINGS; ZIRCONIUM BORIDES; ETCHING; GALLIUM ARSENIDES; SPUTTERING; ARSENIC COMPOUNDS; ARSENIDES; BORIDES; BORON COMPOUNDS; COATINGS; FILMS; GALLIUM COMPOUNDS; PNICTIDES; SURFACE FINISHING; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Heath, L.S., and Kwiatkowski, B. Method of etching zirconium diboride. United States: N. p., 1988. Web.
Heath, L.S., & Kwiatkowski, B. Method of etching zirconium diboride. United States.
Heath, L.S., and Kwiatkowski, B. 1988. "Method of etching zirconium diboride". United States. doi:.
@article{osti_7192671,
title = {Method of etching zirconium diboride},
author = {Heath, L.S. and Kwiatkowski, B.},
abstractNote = {The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1988,
month = 3
}
  • A method for making a self-bonding ZrB/sub 2/ abrasive and refractory material is patented. A mixture of zirconium silicate (zircon) particles, boron carbide (or boron carbide and boron oxide), and carbon are reacted in a C crucible under vacuum or an inent atmosphere at temperatures from ontrol migra- 1350 c- C to ontrol migra- 1900 c- C. The reaction product is removed fromtthe crucible, screened to remove any C present, and placed in a graphite die, where it is subjected to heat and pressure to obtain the desired material. (M.P.G.)
  • A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.
  • This patent describes a nuclear reactor fuel assembly having a fuel rod containing a burnable poison coated nuclear fuel pellet. The fuel pellet consists of: (a) a generally cylindrical substrate consisting essentially of uranium dioxide; (b) a bondably deposited layer consisting essentially of niobium circumferentially surrounding the substrate; and (c) a bondably deposited burnable poison layer consisting essentially of zirconium diboride circumferentially surrounding the niobium layer.
  • A method for removing oxide contamination from titanium diboride powder involves the direct chemical treatment of TiB.sub.2 powders with a gaseous boron halide, such as BCl.sub.3, at temperatures in the range of 500.degree.-800.degree. C. The BCl.sub.3 reacts with the oxides to form volatile species which are removed by the BCl.sub.3 exit stream.