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Title: Application of a CF/sub 3//sup +/ primary ion source for depth profiling in secondary ion mass spectrometry

Journal Article · · Anal. Chem.; (United States)
DOI:https://doi.org/10.1021/ac00165a011· OSTI ID:7191455

The authors have used a CF/sub 3//sup +/ primary ion source for some typical depth profiling applications in secondary ion mass spectrometry and compared its performance with the conventionally used O/sub 2//sup +/ source. At the same accelerating potential, steady-state secondary ion emission conditions are reached much faster under CF/sub 3//sup +/ than under O/sub 2//sup +/ bombardment. Shallow implant profiles can be measured with better definition. This improvement is directly related to the shorter converted layer range produced at 5 keV CF/sub 3//sup +/ versus 5 keV O/sub 2//sup +/. The better depth solution found under CF/sub 3//sup +/ bombardment may also be rationalized by the same reason of a shorter intermixed range at the interface. However, this is shown at least in part to be due to a smoother surface generated compared to the surface after O/sub 2//sup +/ bombardment.

Research Organization:
IBM T.J. Watson Research Center, Yorktown Heights, NY (USA)
OSTI ID:
7191455
Journal Information:
Anal. Chem.; (United States), Vol. 60:14
Country of Publication:
United States
Language:
English