Application of a CF/sub 3//sup +/ primary ion source for depth profiling in secondary ion mass spectrometry
The authors have used a CF/sub 3//sup +/ primary ion source for some typical depth profiling applications in secondary ion mass spectrometry and compared its performance with the conventionally used O/sub 2//sup +/ source. At the same accelerating potential, steady-state secondary ion emission conditions are reached much faster under CF/sub 3//sup +/ than under O/sub 2//sup +/ bombardment. Shallow implant profiles can be measured with better definition. This improvement is directly related to the shorter converted layer range produced at 5 keV CF/sub 3//sup +/ versus 5 keV O/sub 2//sup +/. The better depth solution found under CF/sub 3//sup +/ bombardment may also be rationalized by the same reason of a shorter intermixed range at the interface. However, this is shown at least in part to be due to a smoother surface generated compared to the surface after O/sub 2//sup +/ bombardment.
- Research Organization:
- IBM T.J. Watson Research Center, Yorktown Heights, NY (USA)
- OSTI ID:
- 7191455
- Journal Information:
- Anal. Chem.; (United States), Vol. 60:14
- Country of Publication:
- United States
- Language:
- English
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ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM
MASS SPECTROSCOPY
ARSENIC
BORON
COPPER
FLUORINATED ALIPHATIC HYDROCARBONS
ION SOURCES
GALLIUM
SILICON
CATIONS
EXPERIMENTAL DATA
ION MICROPROBE ANALYSIS
SPATIAL DISTRIBUTION
CHARGED PARTICLES
CHEMICAL ANALYSIS
DATA
DISTRIBUTION
ELEMENTS
HALOGENATED ALIPHATIC HYDROCARBONS
INFORMATION
IONS
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
SEMIMETALS
SPECTROSCOPY
TRANSITION ELEMENTS
400102* - Chemical & Spectral Procedures