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Title: Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

Abstract

A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuousmore » first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.« less

Inventors:
Publication Date:
OSTI Identifier:
7175095
Patent Number(s):
US 5035923; A
Application Number:
PPN: US 7-526365
Assignee:
GTE Laboratories Incorporated, Waltham, MA (United States)
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Resource Relation:
Patent File Date: 21 May 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; ALUMINIUM OXIDES; SILICON CARBIDES; PROTECTIVE COATINGS; SILICON NITRIDES; ZIRCONIUM OXIDES; HEAT RESISTANT MATERIALS; ALUMINIUM COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; COATINGS; DEPOSITION; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Sarin, V K. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates. United States: N. p., 1991. Web.
Sarin, V K. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates. United States.
Sarin, V K. Tue . "Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates". United States.
@article{osti_7175095,
title = {Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates},
author = {Sarin, V K},
abstractNote = {A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.},
doi = {},
url = {https://www.osti.gov/biblio/7175095}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {7}
}