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Title: Vacuum die attach for integrated circuits

Abstract

A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required. 1 figure.

Inventors:
;
Publication Date:
OSTI Identifier:
7173761
Patent Number(s):
US 5046656; A
Application Number:
PPN: US 7-243535
Assignee:
University of California, Oakland, CA (United States) PTO; EDB-94-111360
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 12 Sep 1988
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; FABRICATION; BONDING; DIES; ELECTRIC CONDUCTIVITY; HEAT RESISTANT MATERIALS; SILICON; SUBSTRATES; VACUUM SYSTEMS; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; JOINING; MATERIALS; MICROELECTRONIC CIRCUITS; PHYSICAL PROPERTIES; SEMIMETALS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Schmitt, E.H., and Tuckerman, D.B.. Vacuum die attach for integrated circuits. United States: N. p., 1991. Web.
Schmitt, E.H., & Tuckerman, D.B.. Vacuum die attach for integrated circuits. United States.
Schmitt, E.H., and Tuckerman, D.B.. Tue . "Vacuum die attach for integrated circuits". United States.
@article{osti_7173761,
title = {Vacuum die attach for integrated circuits},
author = {Schmitt, E.H. and Tuckerman, D.B.},
abstractNote = {A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required. 1 figure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 10 00:00:00 EDT 1991},
month = {Tue Sep 10 00:00:00 EDT 1991}
}