Vacuum die attach for integrated circuits
A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required. 1 figure.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- University of California, Oakland, CA (United States)
- Patent Number(s):
- A; US 5046656
- Application Number:
- PPN: US 7-243535
- OSTI ID:
- 7173761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BONDING
DIES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
HEAT RESISTANT MATERIALS
INTEGRATED CIRCUITS
JOINING
MATERIALS
MICROELECTRONIC CIRCUITS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SUBSTRATES
VACUUM SYSTEMS