Thermodynamic analysis of the W--F--Si--H and W--F--Si--H--Cl systems
- Department of Chemical Engineering, San Jose State University, San Jose, California 95192 (US)
- Genus Incorporated, Mountain View, California 94043 (USA)
Chemical vapor deposition of WSi{sub 2} was studied through thermodynamic equilibrium calculations for the W--F--Si--H and W--F--Si--H--Cl systems. The calculations were made with a computer program that minimizes the Gibbs free energy by Langrangian multiplier techniques. The parameter range for these system analyses were: temperature 473 to 1073 K, pressure from 50 to 500 mTorr, and Si/W ratios of 3 to 1000. 21 gas phase species and eight solid species were included in the calculations for the W--F--Si--H system and 39 gas phase species and 15 solid species were considered for the W--F--Si--H--Cl system. At the equilibrium condition, H{sub 2}, SiF{sub 4}, and SiF{sub 2}H{sub 2} are the most prominent gaseous species for the W--F--Si--H system while WSi{sub 2} and Si are formed in the solid phase. For the W--F--Si--H--Cl system, WSi{sub 2} and Si are formed in the solid phase, while H{sub 2}, SiCl{sub 4}, HCl, SiF{sub 4} and SiHCl{sub 3} are the most prominent gas phase species. The SiCl{sub 2} intermediate plays a key role in the surface activated reaction for this system.
- OSTI ID:
- 7171206
- Journal Information:
- Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA), Vol. 8:1; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
Similar Records
STUDIES AT HIGH TEMPERATURES: I. CONSTRUCTION AND OPERATION OF PLASMA GENERATORS. II. THE DETERMINATION OF TEMPERATURES AND ELECTRON DENSITIES IN PLASMAS. III. SPECTROSCOPIC INVESTIGATION OF SOME HALIDE REACTIONS IN A PLASMA JET. IV. INVESTIGATION OF EMISSION SPECTRA FROM SULFUR HALIDES IN ELECTRODELESS DISCHARGES. V. THE SILICON TETRAFLUORIDE-SILICON SYSTEM AT HIGH TEMPERATURES
Energetics and mechanisms in the reaction of Si sup + with SiCl sub 4. Thermochemistry of SiCl, SiCl sup + , and SiCl sub 2 sup +
Related Subjects
HYDROCHLORIC ACID
CHEMISORPTION
HYDROGEN
SILICON CHLORIDES
SILICON FLUORIDES
TUNGSTEN SILICIDES
CHEMICAL VAPOR DEPOSITION
COMPUTER CALCULATIONS
FREE ENERGY
MOS TRANSISTORS
PRESSURE DEPENDENCE
TEMPERATURE DEPENDENCE
THERMAL EQUILIBRIUM
CHEMICAL COATING
CHEMICAL REACTIONS
CHLORIDES
CHLORINE COMPOUNDS
DEPOSITION
ELEMENTS
ENERGY
EQUILIBRIUM
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
NONMETALS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEPARATION PROCESSES
SILICIDES
SILICON COMPOUNDS
SORPTION
SURFACE COATING
THERMODYNAMIC PROPERTIES
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
360603* - Materials- Properties