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Title: Polysilicon photoconductor for integrated circuits

Abstract

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.

Inventors:
;
Publication Date:
OSTI Identifier:
7165181
Patent Number(s):
US 4821091; A
Application Number:
PPN: US 7-147130
Assignee:
Dept. of Energy, Washington, DC (United States) PTO; EDB-94-117934
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Resource Relation:
Patent File Date: 21 Jan 1988
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; PHOTOCONDUCTORS; FABRICATION; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; RESPONSE FUNCTIONS; CHEMICAL COATING; DEPOSITION; ELECTRONIC CIRCUITS; FUNCTIONS; MICROELECTRONIC CIRCUITS; SURFACE COATING; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Hammond, R.B., and Bowman, D.R. Polysilicon photoconductor for integrated circuits. United States: N. p., 1989. Web.
Hammond, R.B., & Bowman, D.R. Polysilicon photoconductor for integrated circuits. United States.
Hammond, R.B., and Bowman, D.R. Tue . "Polysilicon photoconductor for integrated circuits". United States.
@article{osti_7165181,
title = {Polysilicon photoconductor for integrated circuits},
author = {Hammond, R.B. and Bowman, D.R.},
abstractNote = {A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {4}
}