Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x

doi:https://doi.org/10.1103/PhysRevB.46.4261

Title: Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x

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Abstract

Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAs{sub 1{minus}{ital x}}P{sub {ital x}} buffer. The lattice-mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electron-spin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial-layer thicknesses varying from 0.1 to 0.3 {mu}m and the phosphorus concentration {ital x} varying from 0.21 to 0.28. Electron-spin polarization as high as 90% has been observed. The 0.3-{mu}m-thick sample, well in excess of theoretical estimates for the critical thickness for pseudomorphic growth, reaches an electron-spin polarization of 80%, demonstrating a significant persistence of lattice strain.

Authors:

Maruyama, T; Garwin, E L ^[1]; Prepost, R; Zapalac, G H ^[2]

Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (United States)
Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)

Publication Date:: 1992-08-15

OSTI Identifier:: 7164043

DOE Contract Number:: AC03-76SF00515; AC02-76ER00881

Resource Type:: Journal Article

Journal Name:: Physical Review, B: Condensed Matter; (United States)

Additional Journal Information:: Journal Volume: 46:7; Journal ID: ISSN 0163-1829

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; PHOTOEMISSION; DISLOCATIONS; HETEROJUNCTIONS; POLARIZATION; SPIN ORIENTATION; STRAINS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; GALLIUM COMPOUNDS; JUNCTIONS; LINE DEFECTS; ORIENTATION; PNICTIDES; SECONDARY EMISSION; SEMICONDUCTOR JUNCTIONS; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats


                    Maruyama, T, Garwin, E L, Prepost, R, and Zapalac, G H. Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x.  United States: N. p., 1992. 
        Web.  doi:10.1103/PhysRevB.46.4261.

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                    Maruyama, T, Garwin, E L, Prepost, R, & Zapalac, G H. Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x.  United States.  https://doi.org/10.1103/PhysRevB.46.4261

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                    Maruyama, T, Garwin, E L, Prepost, R, and Zapalac, G H. Sat .  
        "Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x".  United States.  https://doi.org/10.1103/PhysRevB.46.4261.

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@article{osti_7164043,

  title        = {Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x},

  author       = {Maruyama, T and Garwin, E L and Prepost, R and Zapalac, G H},

  abstractNote = {Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAs{sub 1{minus}{ital x}}P{sub {ital x}} buffer. The lattice-mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electron-spin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial-layer thicknesses varying from 0.1 to 0.3 {mu}m and the phosphorus concentration {ital x} varying from 0.21 to 0.28. Electron-spin polarization as high as 90% has been observed. The 0.3-{mu}m-thick sample, well in excess of theoretical estimates for the critical thickness for pseudomorphic growth, reaches an electron-spin polarization of 80%, demonstrating a significant persistence of lattice strain.},

  doi          = {10.1103/PhysRevB.46.4261},

  url          = {https://www.osti.gov/biblio/7164043},
  journal      = {Physical Review, B: Condensed Matter; (United States)},

  issn         = {0163-1829},

  number       = ,

  volume       = 46:7,

  place        = {United States},

  year         = {1992},

  month        = {8}

}

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https://doi.org/10.1103/PhysRevB.46.4261

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