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Title: Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x

Abstract

Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAs{sub 1{minus}{ital x}}P{sub {ital x}} buffer. The lattice-mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electron-spin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial-layer thicknesses varying from 0.1 to 0.3 {mu}m and the phosphorus concentration {ital x} varying from 0.21 to 0.28. Electron-spin polarization as high as 90% has been observed. The 0.3-{mu}m-thick sample, well in excess of theoretical estimates for the critical thickness for pseudomorphic growth, reaches an electron-spin polarization of 80%, demonstrating a significant persistence of lattice strain.

Authors:
;  [1]; ;  [2]
  1. Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (United States)
  2. Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
7164043
DOE Contract Number:  
AC03-76SF00515; AC02-76ER00881
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter; (United States)
Additional Journal Information:
Journal Volume: 46:7; Journal ID: ISSN 0163-1829
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; PHOTOEMISSION; DISLOCATIONS; HETEROJUNCTIONS; POLARIZATION; SPIN ORIENTATION; STRAINS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; GALLIUM COMPOUNDS; JUNCTIONS; LINE DEFECTS; ORIENTATION; PNICTIDES; SECONDARY EMISSION; SEMICONDUCTOR JUNCTIONS; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats

Maruyama, T, Garwin, E L, Prepost, R, and Zapalac, G H. Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x. United States: N. p., 1992. Web. doi:10.1103/PhysRevB.46.4261.
Maruyama, T, Garwin, E L, Prepost, R, & Zapalac, G H. Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x. United States. https://doi.org/10.1103/PhysRevB.46.4261
Maruyama, T, Garwin, E L, Prepost, R, and Zapalac, G H. Sat . "Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x". United States. https://doi.org/10.1103/PhysRevB.46.4261.
@article{osti_7164043,
title = {Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x},
author = {Maruyama, T and Garwin, E L and Prepost, R and Zapalac, G H},
abstractNote = {Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAs{sub 1{minus}{ital x}}P{sub {ital x}} buffer. The lattice-mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electron-spin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial-layer thicknesses varying from 0.1 to 0.3 {mu}m and the phosphorus concentration {ital x} varying from 0.21 to 0.28. Electron-spin polarization as high as 90% has been observed. The 0.3-{mu}m-thick sample, well in excess of theoretical estimates for the critical thickness for pseudomorphic growth, reaches an electron-spin polarization of 80%, demonstrating a significant persistence of lattice strain.},
doi = {10.1103/PhysRevB.46.4261},
url = {https://www.osti.gov/biblio/7164043}, journal = {Physical Review, B: Condensed Matter; (United States)},
issn = {0163-1829},
number = ,
volume = 46:7,
place = {United States},
year = {1992},
month = {8}
}