Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells
Abstract
We describe the femtosecond {ital optical} {ital gain} nonlinearities for the unusual case of electrons which are distributed between the direct-GaAs and indirect-AlAs layers in a GaAs/AlAs type-II multiple quantum-well (MQW) structure. Due to the spatial separation of electrons from the holes, we observe a significant increase in the gain lifetime ({gt}150 ps) in type-II MQWs, as compared to type -I MQWs ({similar to}50 ps). In addition, we investigate the effect of a longitudinal electric field on {Gamma}-{ital X} energy splitting in type-II structures. Finally, at early times we observe an ultrafast nonlinear optical response in the gain/absorption spectra which we attributed to electron-hole scattering without carrier loss.
- Authors:
-
- Photonics Research Incorporated, 350 Interlocken Parkway, Broomfield, Colorado 80021 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Solid State Electronics Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
- Publication Date:
- OSTI Identifier:
- 7164017
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters; (United States)
- Additional Journal Information:
- Journal Volume: 61:14; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; PHOTO-INDUCED TRANSIENT SPECTROSCOPY; GALLIUM ARSENIDES; ABSORPTION SPECTRA; ELECTRON-HOLE COUPLING; GAIN; OPTICAL PROPERTIES; STARK EFFECT; ALUMINIUM COMPOUNDS; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; COUPLING; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTRA; SPECTROSCOPY; 360606* - Other Materials- Physical Properties- (1992-)
Citation Formats
Fu, W S, Olbright, G R, Klem, J F, and Harris, Jr, J S. Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells. United States: N. p., 1992.
Web. doi:10.1063/1.108443.
Fu, W S, Olbright, G R, Klem, J F, & Harris, Jr, J S. Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells. United States. https://doi.org/10.1063/1.108443
Fu, W S, Olbright, G R, Klem, J F, and Harris, Jr, J S. 1992.
"Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells". United States. https://doi.org/10.1063/1.108443.
@article{osti_7164017,
title = {Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells},
author = {Fu, W S and Olbright, G R and Klem, J F and Harris, Jr, J S},
abstractNote = {We describe the femtosecond {ital optical} {ital gain} nonlinearities for the unusual case of electrons which are distributed between the direct-GaAs and indirect-AlAs layers in a GaAs/AlAs type-II multiple quantum-well (MQW) structure. Due to the spatial separation of electrons from the holes, we observe a significant increase in the gain lifetime ({gt}150 ps) in type-II MQWs, as compared to type -I MQWs ({similar to}50 ps). In addition, we investigate the effect of a longitudinal electric field on {Gamma}-{ital X} energy splitting in type-II structures. Finally, at early times we observe an ultrafast nonlinear optical response in the gain/absorption spectra which we attributed to electron-hole scattering without carrier loss.},
doi = {10.1063/1.108443},
url = {https://www.osti.gov/biblio/7164017},
journal = {Applied Physics Letters; (United States)},
issn = {0003-6951},
number = ,
volume = 61:14,
place = {United States},
year = {Mon Oct 05 00:00:00 EDT 1992},
month = {Mon Oct 05 00:00:00 EDT 1992}
}