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Title: Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells

Abstract

We describe the femtosecond {ital optical} {ital gain} nonlinearities for the unusual case of electrons which are distributed between the direct-GaAs and indirect-AlAs layers in a GaAs/AlAs type-II multiple quantum-well (MQW) structure. Due to the spatial separation of electrons from the holes, we observe a significant increase in the gain lifetime ({gt}150 ps) in type-II MQWs, as compared to type -I MQWs ({similar to}50 ps). In addition, we investigate the effect of a longitudinal electric field on {Gamma}-{ital X} energy splitting in type-II structures. Finally, at early times we observe an ultrafast nonlinear optical response in the gain/absorption spectra which we attributed to electron-hole scattering without carrier loss.

Authors:
;  [1];  [2];  [3]
  1. Photonics Research Incorporated, 350 Interlocken Parkway, Broomfield, Colorado 80021 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  3. Solid State Electronics Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
7164017
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (United States)
Additional Journal Information:
Journal Volume: 61:14; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; PHOTO-INDUCED TRANSIENT SPECTROSCOPY; GALLIUM ARSENIDES; ABSORPTION SPECTRA; ELECTRON-HOLE COUPLING; GAIN; OPTICAL PROPERTIES; STARK EFFECT; ALUMINIUM COMPOUNDS; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; COUPLING; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTRA; SPECTROSCOPY; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats

Fu, W S, Olbright, G R, Klem, J F, and Harris, Jr, J S. Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells. United States: N. p., 1992. Web. doi:10.1063/1.108443.
Fu, W S, Olbright, G R, Klem, J F, & Harris, Jr, J S. Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells. United States. https://doi.org/10.1063/1.108443
Fu, W S, Olbright, G R, Klem, J F, and Harris, Jr, J S. 1992. "Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells". United States. https://doi.org/10.1063/1.108443.
@article{osti_7164017,
title = {Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells},
author = {Fu, W S and Olbright, G R and Klem, J F and Harris, Jr, J S},
abstractNote = {We describe the femtosecond {ital optical} {ital gain} nonlinearities for the unusual case of electrons which are distributed between the direct-GaAs and indirect-AlAs layers in a GaAs/AlAs type-II multiple quantum-well (MQW) structure. Due to the spatial separation of electrons from the holes, we observe a significant increase in the gain lifetime ({gt}150 ps) in type-II MQWs, as compared to type -I MQWs ({similar to}50 ps). In addition, we investigate the effect of a longitudinal electric field on {Gamma}-{ital X} energy splitting in type-II structures. Finally, at early times we observe an ultrafast nonlinear optical response in the gain/absorption spectra which we attributed to electron-hole scattering without carrier loss.},
doi = {10.1063/1.108443},
url = {https://www.osti.gov/biblio/7164017}, journal = {Applied Physics Letters; (United States)},
issn = {0003-6951},
number = ,
volume = 61:14,
place = {United States},
year = {Mon Oct 05 00:00:00 EDT 1992},
month = {Mon Oct 05 00:00:00 EDT 1992}
}