Extended x-ray-absorption fine-structure determination of bond-length conservation at the clean InP(110) surface
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Stanford Electronics Laboratory, Stanford University, Stanford, California 94305 (United States)
- Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
Surface-sensitive extended x-ray-absorption fine structure has determined the near-neighbor bond lengths at the clean InP(110) surface. We find no change in the first-neighbor P-In bond length and a small but measurable, {similar to}0.1 A, expansion of the average P-P second-neighbor distance. Together with recent surface-sensitive x-ray standing-wave results (Woicik {ital et} {ital al}., Phys. Rev. Lett. 68, 341 (1992)), these data establish the bond-length-conserving rotation model for the nonpolar III-V semiconductor cleavage surfaces.
- DOE Contract Number:
- AC03-82ER13000
- OSTI ID:
- 7162262
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Vol. 46:15; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
Similar Records
Extended x-ray absorption fine structure and x-ray standing wave study of the clean InP(110) surface relaxation
Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study
Determination of the Sb/Si(111) interfacial structure by back-reflection x-ray standing waves and surface extended x-ray-absorption fine structure
Journal Article
·
Wed Jul 01 00:00:00 EDT 1992
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
·
OSTI ID:7162262
+6 more
Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·
OSTI ID:7162262
+2 more
Determination of the Sb/Si(111) interfacial structure by back-reflection x-ray standing waves and surface extended x-ray-absorption fine structure
Journal Article
·
Thu Aug 15 00:00:00 EDT 1991
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:7162262
+5 more
Related Subjects
36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
SURFACE PROPERTIES
ABSORPTION SPECTRA
BOND ANGLE
BOND LENGTHS
CLEAVAGE
X RADIATION
CRYSTAL STRUCTURE
DIMENSIONS
ELECTROMAGNETIC RADIATION
INDIUM COMPOUNDS
IONIZING RADIATIONS
LENGTH
MICROSTRUCTURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SPECTRA
360606* - Other Materials- Physical Properties- (1992-)
INDIUM PHOSPHIDES
SURFACE PROPERTIES
ABSORPTION SPECTRA
BOND ANGLE
BOND LENGTHS
CLEAVAGE
X RADIATION
CRYSTAL STRUCTURE
DIMENSIONS
ELECTROMAGNETIC RADIATION
INDIUM COMPOUNDS
IONIZING RADIATIONS
LENGTH
MICROSTRUCTURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SPECTRA
360606* - Other Materials- Physical Properties- (1992-)