skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

Abstract

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.

Inventors:
;
Publication Date:
OSTI Identifier:
7157562
Patent Number(s):
US 4640002; A
Application Number:
PPN: US 6-805435
Assignee:
Univ. of Delaware, Newark, DE (United States)
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Resource Relation:
Patent File Date: 5 Dec 1985
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; FABRICATION; DEFECTS; DETECTION; MONITORING; RELIABILITY; REMOVAL; SEMICONDUCTOR MATERIALS; DIRECT ENERGY CONVERTERS; MATERIALS; PHOTOELECTRIC CELLS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Phillips, J E, and Lasswell, P G. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices. United States: N. p., 1987. Web.
Phillips, J E, & Lasswell, P G. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices. United States.
Phillips, J E, and Lasswell, P G. 1987. "Method and apparatus for increasing the durability and yield of thin film photovoltaic devices". United States.
@article{osti_7157562,
title = {Method and apparatus for increasing the durability and yield of thin film photovoltaic devices},
author = {Phillips, J E and Lasswell, P G},
abstractNote = {Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.},
doi = {},
url = {https://www.osti.gov/biblio/7157562}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 03 00:00:00 EST 1987},
month = {Tue Feb 03 00:00:00 EST 1987}
}