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Title: Analysis of effects of impurities intentionally incorporated into silicon. Final report, Feburary 1, 1977--December 1, 1977

Abstract

A methodology has been developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties were then measured for each group processed, and this data, along with all the material, (cells and scrap) were delivered to JPL for further analysis. All 33 lots of Group ''C'', 14 lots of Group ''CM'' and 16 lots of Group ''F'' have been fabricated into cells, tested and delivered to JPL.

Authors:
Publication Date:
Research Org.:
Spectrolab, Inc., Sylmar, Calif. (USA)
OSTI Identifier:
7152746
Report Number(s):
DOE/JPL/954694-4
DOE Contract Number:
NAS-7-100-954694
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON; IMPURITIES; SILICON SOLAR CELLS; ELECTRICAL PROPERTIES; FABRICATION; COPPER ADDITIONS; CRYSTAL GROWTH; CURRENT DENSITY; SPECTRAL RESPONSE; TITANIUM ADDITIONS; ZONE MELTING; ALLOYS; COPPER ALLOYS; DIRECT ENERGY CONVERTERS; ELEMENTS; MELTING; PHASE TRANSFORMATIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMIMETALS; SOLAR CELLS; TITANIUM ALLOYS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Uno, F. Analysis of effects of impurities intentionally incorporated into silicon. Final report, Feburary 1, 1977--December 1, 1977. United States: N. p., 1977. Web. doi:10.2172/7152746.
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Uno, F. Analysis of effects of impurities intentionally incorporated into silicon. Final report, Feburary 1, 1977--December 1, 1977. United States. doi:10.2172/7152746.
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Uno, F. Thu . "Analysis of effects of impurities intentionally incorporated into silicon. Final report, Feburary 1, 1977--December 1, 1977". United States. doi:10.2172/7152746. https://www.osti.gov/servlets/purl/7152746.
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@article{osti_7152746,
title = {Analysis of effects of impurities intentionally incorporated into silicon. Final report, Feburary 1, 1977--December 1, 1977},
author = {Uno, F.},
abstractNote = {A methodology has been developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties were then measured for each group processed, and this data, along with all the material, (cells and scrap) were delivered to JPL for further analysis. All 33 lots of Group ''C'', 14 lots of Group ''CM'' and 16 lots of Group ''F'' have been fabricated into cells, tested and delivered to JPL.},
doi = {10.2172/7152746},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 15 00:00:00 EST 1977},
month = {Thu Dec 15 00:00:00 EST 1977}
}
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Technical Report:
View Technical Report (1.04 MB)
DOI:  10.2172/7152746
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  • ;
    A methodology has been developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties are then measured for each group processed, and this data, along with all the material, (cells and scrap) is delivered to JPL for further analysis. Eleven groups of samples, comprising over one hundred parts, have been fabricated, tested and delivered to JPL.

  • Fifty-seven separate lots of silicon samples supplied by JPL have been fabricated into solar cells using conventional aerospace cell fabrication technology. These lots of wafers contain various types and concentrations of impurities that have been deliberately incorporated into the silicon during ingot growth. A sequence which monitors process control and can alert us to any cross contamination from run to run has been developed and is in operation. The properties of the cells within each lot were, with one exception, extremely consistent both electrically and spectrally. There was a significant amount of variation from lot to lot, which was notmore » unexpected. There was a good correlation between the electrical outputs as measured, and the spectral response data. Air mass zero short circuit current densities for the ''CM'' group ranged from 13.9 to 34.6 mA/cm/sup 2/, and power output densities varied from 5.6 to 16.4 mW/cm/sup 2/. A typical space cell made from ''high grade'' silicon of this thickness and resistivity would yield 15 to 17 mW/cm/sup 2/ using this process sequence, thus indicating that some of the sample lots have not been compromised significantly by deliberate impurity contamination.« less

  • A methodology has been developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties are then measured for each group processed, and these data, along with the material (cells and scrap), are delivered to JPL for further analysis. All 33 lots of Group ''C'' plus 3 lots each from the ''CM'' and ''F'' groups have been fabricated into cells, tested, and delivered to JPL.

  • ; ;
    S>Studies on electron-beam-refined tungsten single crystals showed that small amounts of C, O, and N did not change the mcde of deformation at 400 tained C. Oxygen and N appeared to have little effect and C tended to raise the recrystallization temperature, which was found to be 1200 to 1500 tained C. Carbon and probably O caused refinements in the recrystallized grain size. When the temperature of recrystallization was increased above 2000 tained C, the recrystullized grain sizes of all specimens tended to approach the same value. The addition of certain refractory oxides, nitrides, and carbides raised the recrystallization temperaturemore » of powder-metullurgy tungsten, around 1600 to 1700 tained C, to 1800 tained C. Some additions refined the grain size and caused columnar grain formation. The bend ductilebrittle transition temperature was lowered from 230 to 150 tained C for wrought and from 420 to 330 tained C for the recrystullized condition by the presence of 2 vol.% of zirconia or thoria plus sodium oxide. The ductile-brittle transition temperature for wrought and recrystallized single crystuls was 320 tained C. (auth)« less

  • A research program is proposed to determine the response of desert ecosystems to the operation of various solar conversion systems. Existing solar powered irrigation pumping systems are described, as well as the 5 MW solar thermal test system at Albuquerque, the proposed 10 MW central receiver system at Barstow, and photovoltaic solar dispersed power systems. The theoretical ecological impacts of solar conversion system are described. Three major impact categories are discussed in detail: shading, wind deflection, and physical disturbance. Research needs necessary to evaluate biotic and abiotic changes in the desert ecosystem are delineated, and specific monitoring and manipulation programsmore » for existing and proposed solar conversion sites are proposed.« less