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Title: Bulk III-V compound semiconductor crystal growth

Abstract

This paper discusses the production of III-V compound semiconductor substrates characterized by structural perfection and chemical homogeneity. Special attention is given to the use of vertical-gradient-freeze (VGF) technique for producing large high-quality GaP, InP, and GaAs crystals. The characteristics of VGF-grown GaAs crystals are described, including the dislocation-count distribution, etch-pit density, and electrical properties. The VGF-grown crystals have very low levels of crystalline defects distributed uniformly throughout the crystal; growth striations are planar and are greatly reduced in comparison with those observed in materials produced by the liquid-encapsulated Czochralski method. Yields obtained with the VGF method compare favorably with those of other commercial crystal-growth processes. 9 refs.

Authors:
; ; ;  [1]
  1. AT and T Bell Laboratories, Princeton, NJ (USA) AT and T Microelectronics, Reading, PA (USA) AT and T Bell Laboratories, Murray Hill, NJ (USA)
Publication Date:
OSTI Identifier:
7152214
Resource Type:
Journal Article
Journal Name:
AT and T Technical Journal; (USA)
Additional Journal Information:
Journal Volume: 68; Journal ID: ISSN 8756-2324
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; ELECTRICAL PROPERTIES; PRODUCTION; BORON NITRIDES; CRYSTAL GROWTH; CZOCHRALSKI METHOD; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; MONOCRYSTALS; SUBSTRATES; ARSENIC COMPOUNDS; ARSENIDES; BORON COMPOUNDS; CRYSTAL GROWTH METHODS; CRYSTALS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; 360601* - Other Materials- Preparation & Manufacture; 360603 - Materials- Properties

Citation Formats

Clemans, J E, Ejim, T I, Gault, W A, and Monberg, E M. Bulk III-V compound semiconductor crystal growth. United States: N. p., 1989. Web. doi:10.1002/j.1538-7305.1989.tb00644.x.
Clemans, J E, Ejim, T I, Gault, W A, & Monberg, E M. Bulk III-V compound semiconductor crystal growth. United States. https://doi.org/10.1002/j.1538-7305.1989.tb00644.x
Clemans, J E, Ejim, T I, Gault, W A, and Monberg, E M. Wed . "Bulk III-V compound semiconductor crystal growth". United States. https://doi.org/10.1002/j.1538-7305.1989.tb00644.x.
@article{osti_7152214,
title = {Bulk III-V compound semiconductor crystal growth},
author = {Clemans, J E and Ejim, T I and Gault, W A and Monberg, E M},
abstractNote = {This paper discusses the production of III-V compound semiconductor substrates characterized by structural perfection and chemical homogeneity. Special attention is given to the use of vertical-gradient-freeze (VGF) technique for producing large high-quality GaP, InP, and GaAs crystals. The characteristics of VGF-grown GaAs crystals are described, including the dislocation-count distribution, etch-pit density, and electrical properties. The VGF-grown crystals have very low levels of crystalline defects distributed uniformly throughout the crystal; growth striations are planar and are greatly reduced in comparison with those observed in materials produced by the liquid-encapsulated Czochralski method. Yields obtained with the VGF method compare favorably with those of other commercial crystal-growth processes. 9 refs.},
doi = {10.1002/j.1538-7305.1989.tb00644.x},
url = {https://www.osti.gov/biblio/7152214}, journal = {AT and T Technical Journal; (USA)},
issn = {8756-2324},
number = ,
volume = 68,
place = {United States},
year = {1989},
month = {2}
}