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Title: Structure of thin SnO/sub 2/-Doped In/sub 2/O/sub 3/ films

Abstract

This paper studies the structure of SnO/sub 2/ doped In/sub 2/O/sub 3/ films obtained by the method of electron-beam evaporation. The properties and structure of SnO/sub 2/-doped In/sub 2/O/sub 3/ films deposited in an oxygen medium under a pressure of ca 10/sup -1/ Pa on a substrate at a temperature of ca 300 K are completely analogous to those of films deposited at the same substrate temperature in a vacuum. It is shown that with reactive electron-beam evaporation the main factor determining the structure of the films and, therefore, their electrical and optical properties, is the substrate temperature.

Authors:
;
Publication Date:
OSTI Identifier:
7152093
Resource Type:
Journal Article
Journal Name:
Inorg. Mater. (Engl. Transl.); (United States)
Additional Journal Information:
Journal Volume: 21:12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM OXIDES; CRYSTAL STRUCTURE; SURFACE COATING; TIN OXIDES; CRYSTAL DOPING; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; EVAPORATION; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THIN FILMS; VISIBLE SPECTRA; BEAMS; CHALCOGENIDES; DEPOSITION; FILMS; INDIUM COMPOUNDS; LEPTON BEAMS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SPECTRA; TIN COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies; 360204 - Ceramics, Cermets, & Refractories- Physical Properties

Citation Formats

Kolchev, B S, and Chutko, V M. Structure of thin SnO/sub 2/-Doped In/sub 2/O/sub 3/ films. United States: N. p., 1986. Web.
Kolchev, B S, & Chutko, V M. Structure of thin SnO/sub 2/-Doped In/sub 2/O/sub 3/ films. United States.
Kolchev, B S, and Chutko, V M. 1986. "Structure of thin SnO/sub 2/-Doped In/sub 2/O/sub 3/ films". United States.
@article{osti_7152093,
title = {Structure of thin SnO/sub 2/-Doped In/sub 2/O/sub 3/ films},
author = {Kolchev, B S and Chutko, V M},
abstractNote = {This paper studies the structure of SnO/sub 2/ doped In/sub 2/O/sub 3/ films obtained by the method of electron-beam evaporation. The properties and structure of SnO/sub 2/-doped In/sub 2/O/sub 3/ films deposited in an oxygen medium under a pressure of ca 10/sup -1/ Pa on a substrate at a temperature of ca 300 K are completely analogous to those of films deposited at the same substrate temperature in a vacuum. It is shown that with reactive electron-beam evaporation the main factor determining the structure of the films and, therefore, their electrical and optical properties, is the substrate temperature.},
doi = {},
url = {https://www.osti.gov/biblio/7152093}, journal = {Inorg. Mater. (Engl. Transl.); (United States)},
number = ,
volume = 21:12,
place = {United States},
year = {Thu May 01 00:00:00 EDT 1986},
month = {Thu May 01 00:00:00 EDT 1986}
}