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Title: Method and apparatus for producing high purity silicon

Abstract

A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

Inventors:
Publication Date:
OSTI Identifier:
7147066
Application Number:
ON: DE84011087
Assignee:
Dept. of Energy ERA-09-025697; EDB-84-081235
DOE Contract Number:  
AC02-77CH00178
Resource Type:
Patent
Resource Relation:
Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; PRODUCTION; PURIFICATION; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; COPPER SILICIDES; HYDROCHLORIC ACID; SILANES; CHEMICAL COATING; COPPER COMPOUNDS; DEPOSITION; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; INORGANIC ACIDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Olson, J.M. Method and apparatus for producing high purity silicon. United States: N. p., 1983. Web.
Olson, J.M. Method and apparatus for producing high purity silicon. United States.
Olson, J.M. Fri . "Method and apparatus for producing high purity silicon". United States.
@article{osti_7147066,
title = {Method and apparatus for producing high purity silicon},
author = {Olson, J.M.},
abstractNote = {A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {5}
}