Schottky barrier formation on (NH/sub 4/)/sub 2/S-treated n- and p-type (100)GaAs

Journal Article · Mon Jul 04 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100572· OSTI ID:7146635

Carpenter, M S; Melloch, M R; Dungan, T E

Because of a large surface state density, which effectively pins the Fermi level at the surface, metals with vastly different work functions and chemistry produce very similar Schottky barriers when deposited on GaAs. We have investigated the effects of an (NH/sub 4/)/sub 2/S surface treatment on the formation of Schottky barriers on n- and p-type GaAs. Samples which have undergone the (NH/sub 4/)/sub 2/S treatment show a reduced pinning of the Fermi level at the surface and hence Schottky barriers which are more sensitive to the metal work function.

• Research Organization: Purdue University, School of Electrical Engineering, West Lafayette, Indiana 47907
• OSTI ID: 7146635
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM
ELECTRIC CONTACTS
GALLIUM ARSENIDES
FERMI LEVEL
SURFACE TREATMENTS
GOLD
SCHOTTKY BARRIER DIODES
ELECTRICAL PROPERTIES
FABRICATION
AMMONIUM COMPOUNDS
ELECTRIC CONDUCTIVITY
SULFIDES
WORK FUNCTIONS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELEMENTS
ENERGY LEVELS
EQUIPMENT
FUNCTIONS
GALLIUM COMPOUNDS
METALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SULFUR COMPOUNDS
TRANSITION ELEMENTS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties