Superconductivity of thin tellurium films at high pressure
Abstract
A study is presented of the dependence of the temperature of the superconducting transition (T /SUB c/ ) of tellurium films on their thickness and the presence of a dielectric environment consisting of silicon dioxide. The authors measured T /SUB c/ of tellurium films, evaluated at the 50% drop in the resistance, at pressures of 6 GPa, since in this pressure range T /SUB c/ of tellurium is independent of the carrier density in the range 10/sup 14/-10/sup 18/ cm/sup -3/. The experimental results are presented. The tellurium in the 150-nm thick films transformed under a pressure of 4 GPa into the Te /SUB II/ modification and had a transition temperature of T /SUB c/ = 4.2 K.
- Authors:
- Publication Date:
- Research Org.:
- Institute of High-Pressure Physics, Acad. of Sci.
- OSTI Identifier:
- 7131496
- Resource Type:
- Journal Article
- Journal Name:
- Inorg. Mater. (Engl. Transl.); (United States)
- Additional Journal Information:
- Journal Volume: 22:1
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; TELLURIUM; SUPERCONDUCTIVITY; MATERIALS TESTING; PRESSURE DEPENDENCE; SILICON OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE MEASUREMENT; THICKNESS; THIN FILMS; TRANSITION TEMPERATURE; ULTRALOW TEMPERATURE; VERY HIGH PRESSURE; CHALCOGENIDES; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; TESTING; THERMODYNAMIC PROPERTIES; 360104* - Metals & Alloys- Physical Properties
Citation Formats
Vlasov, V A. Superconductivity of thin tellurium films at high pressure. United States: N. p., 1986.
Web.
Vlasov, V A. Superconductivity of thin tellurium films at high pressure. United States.
Vlasov, V A. 1986.
"Superconductivity of thin tellurium films at high pressure". United States.
@article{osti_7131496,
title = {Superconductivity of thin tellurium films at high pressure},
author = {Vlasov, V A},
abstractNote = {A study is presented of the dependence of the temperature of the superconducting transition (T /SUB c/ ) of tellurium films on their thickness and the presence of a dielectric environment consisting of silicon dioxide. The authors measured T /SUB c/ of tellurium films, evaluated at the 50% drop in the resistance, at pressures of 6 GPa, since in this pressure range T /SUB c/ of tellurium is independent of the carrier density in the range 10/sup 14/-10/sup 18/ cm/sup -3/. The experimental results are presented. The tellurium in the 150-nm thick films transformed under a pressure of 4 GPa into the Te /SUB II/ modification and had a transition temperature of T /SUB c/ = 4.2 K.},
doi = {},
url = {https://www.osti.gov/biblio/7131496},
journal = {Inorg. Mater. (Engl. Transl.); (United States)},
number = ,
volume = 22:1,
place = {United States},
year = {Sun Jun 01 00:00:00 EDT 1986},
month = {Sun Jun 01 00:00:00 EDT 1986}
}
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