Emitter recombination and minority carrier lifetime measurements on high efficiency Si solar cells
Conference
·
OSTI ID:7124329
A new method has been used to extract the emitter saturation current density directly from transient decay times of short circuit current and open circuit voltage in high efficiency Si solar cells. The method requires measurement of V/sub oc/, J/sub sc/ and their respective asymptotic decay times. The technique is also used to account for unusually high V/sub oc/ values of recent conventional Si solar cells, and to demonstrate the presence of bandgap narrowing in the heavily doped emitter.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7124329
- Report Number(s):
- SAND-84-1000C; CONF-840561-11; ON: DE84011255
- Resource Relation:
- Conference: 17. IEEE photovoltaic specialists conference, Kissimmee, FL, USA, 1 May 1984; Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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