Epitaxial growth of Ba[sub 1[minus][ital x]]K[sub [ital x]]BiO[sub 3] thin films by pulsed-laser deposition

Journal Article · Mon Jan 25 00:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108919· OSTI ID:7123682

Norton, D P; Budai, J D; Chakoumakos, B C; Feenstra, R ^[1]

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1. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6056 (United States)

Epitaxial Ba[sub 1[minus][ital x]]K[sub [ital x]]BiO[sub 3] thin films have been grown by pulsed-laser deposition at temperatures as low as 400 [degree]C. Films have been grown on (100) MgO and SrTiO[sub 3] with [ital T][sub [ital c]]([ital R]=0)=19.5 K and transition widths less than 1 K. Four circle x-ray diffraction shows that these epitaxial films are mostly (00[ital l]) oriented with good in-plane epitaxy. We find that, especially for growth on (100) MgO, an initial epitaxial layer of BaBiO[sub 3] grown at 600 [degree]C significantly improves the properties of the Ba[sub 1[minus][ital x]]K[sub [ital x]]BiO[sub 3] films.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7123682
• Journal Information: Applied Physics Letters; (United States), Vol. 62:4; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
VAPOR PHASE EPITAXY
BISMUTH OXIDES
POTASSIUM OXIDES
SUPERCONDUCTING FILMS
ABLATION
LASER RADIATION
QUATERNARY COMPOUNDS
TRANSITION TEMPERATURE
X-RAY DIFFRACTION
ALKALI METAL COMPOUNDS
ALKALINE EARTH METAL COMPOUNDS
AMINES
AMMONIUM COMPOUNDS
BARIUM COMPOUNDS
BISMUTH COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
EPITAXY
FILMS
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POTASSIUM COMPOUNDS
RADIATIONS
SCATTERING
THERMODYNAMIC PROPERTIES
360201* - Ceramics
Cermets
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360207 - Ceramics
Cermets
& Refractories- Superconducting Properties- (1992-)