Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular-beam epitaxy

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.344971· OSTI ID:7122206

Reno, J L; Carr, M J; Gourley, P L ^[1]

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1. Sandia National Laboratory, Albuquerque, New Mexico 87185 (USA)

We have used transmission electron microscopy to investigate CdTe(111) grown on GaAs(100) by molecular-beam epitaxy. The loop structure previously observed by photoluminescence microscopy has been identified as the boundary between twinned microcrystallites that extend from the CdTe/GaAs interface to the CdTe surface. When viewed along the growth axis, these boundaries between the columnar twins appear as loops and segments. Surface roughness of the GaAs substrate contributes to the initial growth of twinned material. This leads to competitive growth between the twins and the creation of the observed columnar twins.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7122206
• Journal Information: Journal of Applied Physics; (USA), Vol. 67:9; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CRYSTAL STRUCTURE
MOLECULAR BEAM EPITAXY
GALLIUM ARSENIDES
LAYERS
ROUGHNESS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
TWINNING
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
MICROSCOPY
PNICTIDES
SURFACE PROPERTIES
TELLURIDES
TELLURIUM COMPOUNDS
360602* - Other Materials- Structure & Phase Studies